Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy
Lan Li,
Ran Bi,
Zuoyuan Dong
et al.
Abstract:Three‐dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low‐power and high‐performance computing in integrated circuits. Observing and accurately measuring strain in Si/SiGe heterojunctions is critical to increasing carrier mobility and improving device performance. Transmission electron microscopy (TEM) with high spatial resolution and analytical capabilities provides technical support for atomic‐scale strain measurement and promotes significant progress in s… Show more
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