Atomic-scale surface of fused silica induced by chemical mechanical polishing with controlled size spherical ceria abrasives

Comparative Evaluation of Chemical Garden Growth Techniques

“…Moreover, the surface composition of structures was further confirmed by O 1s XPS spectra (Figure S3). All of the structures from three experiments had three chemical states of oxygen at ∼531.4, ∼532.5, and ∼536.7 eV, which indicated the presence of O–H/Si–O, C–O, and chemisorbed oxygen/water, respectively. − The XPS results verified that growth methods did not exhibit a significant difference in terms of chemical composition and bond formation.…”

Atomic surface of quartz glass induced by photocatalytic green chemical mechanical polishing using the developed SiO2@TiO2 core–shell slurry

“…This observation suggests the successful removal of Na 2 CO 3 and Na 2 SiO 3 species that were generated on the surface of quartz glass after immersion in the polishing slurry. 19 Based on the XPS analysis, we can infer that the following reaction occurs during the PCMP process, 19,32 leading to the oxidation of Si–OH to Si–O–Si:Na 2 CO 3 + H 2 O → 2Na + + HCO 3 − + CO 2 HCO 3 − + H 2 O → H 2 CO 3 + OH − SiO 2 + OH − → (SiO 3 ) 2− + H 2 O…”

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

“…44–46 However, the surface of the silicon wafers after CMP did not show SiO 2 , which may indicate that SiO 2 was almost completely removed during polishing. In addition, according to the relevant literature, silicates would be formed on the surface of Si substrate in alkaline wet conditions, and the relevant chemical reaction formulas are as follows: 47,48 Na 2 CO 3 + H 2 O → 2Na + + HCO 3 − + OH − HCO 3 − + H 2 O → H 2 CO 3 + OH − 2H 2 O 2 → 2H 2 O + O 2 Si + O 2 → SiO 2 SiO 2 + 2OH − → H 2 O + SiO 3 2− …”