We report magnetotransport measurements of the critical field behavior of thin Al films deposited onto multiply connected substrates. The substrates were fabricated via a standard electrochemical process that produced a triangular array of 66 nm diameter holes having a lattice constant of 100 nm. The critical field transition of the Al films was measured near Tc as a function of field orientation relative to the substrate normal. With the field oriented along the normal (θ = 0), we observe reentrant superconductivity at a characteristic matching field Hm = 0.22 T, corresponding to one flux quantum per hole. In tilted fields, the position H * of the reentrance feature increases as sec(θ), but the resistivity traces are somewhat more complex than those of a continuous superconducting film. We show that when the tilt angle is tuned such that H * is of the order of the upper critical field Hc, the entire critical region is dominated by the enhanced dissipation associated with a submatching perpendicular component of the applied field. At higher tilt angles a local maximum in the critical field is observed when the perpendicular component of the field is equal to the matching field. :1911.11424v1 [cond-mat.supr-con]
arXiv