“…However, that this does not mean that we will neglect the other more classical techniques as, for example, etch pits technique or X-ray topography in our presentation. The microscopic analysis, which has become available during recent years, especially by HRTEM (e.g., [4][5][6][7][8][9][10][11][12][13]29,33,46,[60][61][62][63][64][65]) and SPM analysis (e.g., [53,55,[66][67][68]), allows for us to underpin our hypothesis that the dislocations in band-insulating transition metal oxides take the role of semi-conducting or metallic nano-wires (e.g., [3,13,32,40,50,51,55,68]). We place special emphasis on this problem, namely that the properties of the local stoichiometry and specifically the valence of the transition metal cations close to the core of dislocations is responsible for the kind of specific electric properties of the dislocations encountered in these materials and that allows for considering the dislocation lines as a kind of nano-wire extending throughout the crystal.…”