Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition

Abstract

A theoretical crystal-field model for the X-(X = 0, S) centres with U,-symmetry leads to three equivalent operators for the np' 'P ground state, from which the g tensor of the defects can be calculated analytically. Three equivalent operator coefficients p , q , r a r e fitted to four a priori independent experimental quantities g,,, g",, gzz and q . This leads to an excellent agreement for NaCl: S-, RbCl : 0-and KCI : 0 -, and to a fair agreement for KCI : S -.

Determination of polarity in noncentrosymmetric layer/substrate systems

“…The composition of the (Ga,In)P layer was chosen so that lattice-parameter mis®t with respect to the substrate is minimized. The solid solution (Ga,In)P is subject to ordering on particular {111} planes, which depends on the polarity and causes a change of local symmetry (Ueda et al, 1987). Our results on the ordering phenomenon itself are dealt with elsewhere (Meyer et al, 1999).…”

Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2

“…Jen et al [3] reported a mixture of simple tetragonal CuAu-I type atomic ordering and chalcopyrite atomic ordering in GaAs 0.5 Sb 0.5 alloys grown by organometallic vapor phase epitaxy (MOVPE). Since then, spontaneous atomic ordering has been reported in many other III-V semiconductor alloys [4][5][6][7]. Among these, CuPt-B type ordering in semiconductor epilayers is the most important.…”

Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films

“…Alloy semiconductor thin films including Si 1Àx Ge x , In 1Àx Ga x P, and In 1Àx Ga x N often exhibit various novel atomic arrangements such as atomic ordering and surface segregation [1][2][3][4][5][6][7][8][9]. Previous theoretical studies reveal that these novel atomic arrangements in thin films are closely related to the lattice constraint from the substrate.…”