Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate

Pham, Van Dong; Dong, Chengye; Robinson, Joshua A.

doi:10.1039/d3na00630a

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2024

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Cited by 4 publications

References 66 publications

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Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy

Pham,

González,

Dappe

et al. 2024

Carbon

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Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy

Pham,

González,

Dappe

et al. 2024

Carbon

View full text Add to dashboard Cite

Comparison of physical and chemical vapor deposition for magnesium intercalation underneath epitaxial graphene

Rondomanski,

Bansal,

Dong

et al. 2024

Journal of Crystal Growth

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Scanning tunneling microscopy of ultrathin indium intercalated between graphene and SiC using confinement heteroepitaxy

Pham,

González,

Dappe

et al. 2024

Applied Physics Letters

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Large-scale and air-stable two-dimensional metal layers intercalated at the interface between epitaxial graphene and SiC offer an appealing material for quantum technology. The atomic and electronic details, as well as the control of the intercalated metals within the interface, however, remain very limited. In this Letter, we explored ultrathin indium confined between graphene and SiC using cryogenic scanning tunneling microscopy, complemented by first-principle density functional theory. Bias-dependent imaging and tunneling spectroscopy visualize a triangular superstructure with a periodicity of 14.7 ± 3 Å and an occupied state at about −1.6 eV, indicating proof of highly crystalline indium. The scanning tunneling microscopy tip was used to manipulate the number of indium layers below graphene, allowing to identify three monatomic In layers and to tune their corresponding electronic properties with atomic precision. This further allows us to attribute the observed triangular superstructure to be solely emerging from the In trilayer, tentatively explained by the lattice mismatch induced by lattice relaxation in the topmost In layer. Our findings provide a microscopic insight into the structure and electronic properties of intercalated metals within the graphene/SiC interface and a unique possibility to manipulate them with atomic precision using the scanning probe technique.

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Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate

Abstract: Two-dimensional metals stabilized at the interface between graphene and SiC attract considerable interest thanks to their intriguing physical properties, providing promising material platforms for quantum technologies. However, the nanoscale picture...

Cited by 4 publications

References 66 publications

Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy

Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy

Comparison of physical and chemical vapor deposition for magnesium intercalation underneath epitaxial graphene

Scanning tunneling microscopy of ultrathin indium intercalated between graphene and SiC using confinement heteroepitaxy

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