2022
DOI: 10.1016/j.scriptamat.2022.114650
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Atomic structures and stability of finite-size extended interstitial defects in silicon: Large-scale molecular simulations with a neural-network potential

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Cited by 5 publications
(1 citation statement)
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“…Examining the barriers for vacancy, divacancy dissociation, and divacancy reorientation, the relative errors in barrier height are as follows: for MTP, the errors are 11.5%, 10.5%, and 4.5% respectively, while for SW, they are 73.1%, 51.9%, and 12.7% respectively. These results demonstrate that the MTP model can better mimic the reference method when studying point defects within larger systems, as demonstrated in references 28,51,52 . The profile and barrier for both divacancy reorientation and divacancy diffusion remain consistent.…”
Section: Cohesive Energy Elastic Constant Point Defects and Extended ...supporting
confidence: 62%
“…Examining the barriers for vacancy, divacancy dissociation, and divacancy reorientation, the relative errors in barrier height are as follows: for MTP, the errors are 11.5%, 10.5%, and 4.5% respectively, while for SW, they are 73.1%, 51.9%, and 12.7% respectively. These results demonstrate that the MTP model can better mimic the reference method when studying point defects within larger systems, as demonstrated in references 28,51,52 . The profile and barrier for both divacancy reorientation and divacancy diffusion remain consistent.…”
Section: Cohesive Energy Elastic Constant Point Defects and Extended ...supporting
confidence: 62%