Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

Bakhtizin, R. Z.; Xue, Qi Kun; Hashizume, T.; Sakurai, Takeshi

doi:10.3367/ufnr.0167.199711f.1227

Usp. Fiz. Nauk

1997

DOI: 10.3367/ufnr.0167.199711f.1227

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Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

R. Z. Bakhtizin¹,

Qi Kun Xue²,

T. Hashizume³

et al.

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Cited by 3 publications

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Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy

Abu-Farsakh

Neugebauer

2009

Phys. Rev. B

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Nitrogen solubility at GaAs and InAs ͑001͒ surfaces has been studied employing density-functional theory calculations. The effect of the surface reconstruction and the reconstruction-induced surface strain on N solubility was analyzed in detail, considering the various surface layers and sites. The stability phase diagrams for the considered systems were constructed, and based on them an estimate of the N concentration has been deduced for the thermodynamically accessible and relevant range of chemical potentials in the various surface layers and at a typical growth temperature of 500°C. Our results show that the solubility of N at the surface is unexpectedly rich and a complex function of the surface reconstructions. We discuss the possible N incorporation mechanisms and the conditions that allow for an enhanced solubility which can be in GaAs up to five orders of magnitude higher than the equilibrium bulk solubility. In addition, we find that the solubility of N at the GaAs͑001͒ surface is one to four orders of magnitude higher than that at the InAs͑001͒ surface.

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Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy

Abu-Farsakh

Neugebauer

2009

Phys. Rev. B

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Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth

Bakhtizin

Hasegawa

Xue

et al. 2000

J. Exp. Theor. Phys.

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Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

Bakhtizin¹,

Xue²,

Xue³

et al. 2004

Usp. Fiz. Nauk

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Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

Cited by 3 publications

References 18 publications

Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy

Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy

Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth

Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

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