Atomic transport during growth of ultrathin dielectrics on silicon

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

“…Such difference in this 18 O profile can be explained by the presence of peroxide defects in the near surface region of oxide film thermally grown, 33 that are not present in the case of the deposited SiO 2 film. On the other hand, for the annealing at 800 C, a total isotopic exchange between 18 O from the D 2 18 O and 16 O from the deposited SiO 2 film occurred, in a similar way to what occurs for SiO 2 films thermally grown annealed at higher temperatures.…”

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

“…The areal densities of 16 O, 18 O, and N were determined by nuclear reaction analysis (NRA) from the plateau regions of the cross section curves using the 16 O͑d , p͒ 17 O, 18 O͑p , ␣͒ 15 N, and 14 N͑d , ␣͒ 12 C reactions, respectively. 13 Nitrogen, 18 O and Si were profiled with subnanometric depth resolution by nuclear narrow resonant reaction profiling (NRP) using the 15 N͑p , ␥͒ 12 C, 18 O͑p , ␣͒ 15 N, and 29 Si͑p , ␥͒ 30 P reactions, near the respective resonances of 429, 151, and 414 keV. 13 Figure 1 shows the RBS spectra for the as-deposited and N 2 -annealed samples for 60 s, in the highly tilted [70°tilt, 165°detection with respect to the incident beam, Fig.…”

“…13 Nitrogen, 18 O and Si were profiled with subnanometric depth resolution by nuclear narrow resonant reaction profiling (NRP) using the 15 N͑p , ␥͒ 12 C, 18 O͑p , ␣͒ 15 N, and 29 Si͑p , ␥͒ 30 P reactions, near the respective resonances of 429, 151, and 414 keV. 13 Figure 1 shows the RBS spectra for the as-deposited and N 2 -annealed samples for 60 s, in the highly tilted [70°tilt, 165°detection with respect to the incident beam, Fig. 1(a)] and in the channeling-grazing angle detection [ Fig.…”

Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

“…10,11 Furthermore, deuterium ͑ 2 H͒ passivation of the SiO 2 /Si or SiO x N y / Si interfaces was introduced 12 as a superior alternative to increase the stability of the H-electrically passivated dielectric /Si interface and thus reliability, deserving detailed study in high-k dielectrics. [13][14][15][16][17][18] In this letter we present hydrogen and deuterium areal densities and concentration profiles in HfSiO, HfSiON, and HfSiN films on Si͑001͒. The thermal stability of 1 H and 2 H as well as the effects of annealing previously to hydrogen or deuterium loading were also accessed by submitting the structures to annealing routines that simulate different steps of device manufacturing.…”