1993
DOI: 10.1017/cbo9780511563904
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Atomic Transport in Solids

Abstract: This book provides the fundamental statistical theory of atomic transport in crystalline solids, that is the means by which processes occurring at the atomic level are related to macroscopic transport coefficients and other observable quantities. The cornerstones of the authors' treatment are (i) the physical concepts of lattice defects, (ii) the phenomenological description provided by non-equilibrium thermodynamics and (iii) the various methods of statistical mechanics used to link these (kinetic theory, ran… Show more

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Cited by 406 publications
(434 citation statements)
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“…The correlation factor in Equation 1 acknowledges the possibility that a diffusing atom can jump back to its previous lattice site if the solute-vacancy pair remains un-dissociated. It can be evaluated from Lidiard's five-frequency exchange model [15,16] according to…”
Section: Discussion: Correlation Effectsmentioning
confidence: 99%
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“…The correlation factor in Equation 1 acknowledges the possibility that a diffusing atom can jump back to its previous lattice site if the solute-vacancy pair remains un-dissociated. It can be evaluated from Lidiard's five-frequency exchange model [15,16] according to…”
Section: Discussion: Correlation Effectsmentioning
confidence: 99%
“…The interaction of substitutional solutes with vacancies in a solvent such as nickel is in fact rather complicated [15]. According to the five-frequency exchange model developed by Lidiard [15,16], five different atom-vacancy exchanges can be identified -each leading to a different local configuration of vacancy, solute and solvent atoms.…”
Section: Introductionmentioning
confidence: 99%
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“…(3). Assuming independent defects (low density limit) 22 the equilibrium concentration of a defect is related to its free energy of formation ∆G f according to…”
Section: A Thermodynamicsmentioning
confidence: 99%
“…Of particular technological importance is the fact that the diffusion of charged dopant atoms is strongly affected by the presence of an internal electric field [42]. As a consequence, if an inhomogeneous distribution of charged defects is present, an internal electric field is generated acting on any charged particle present in the semiconductor.…”
Section: Diffusion Studiesmentioning
confidence: 99%