Atomically Flat, 2D Edge‐Directed Self‐Assembly of Block Copolymers (Adv. Mater. 3/2023)

Kim, Jang Hwan; Jeong, Hyeon U; Yeom, Hye‐In; Han, Kyu Hyo; Yang, Geon Gug; Choi, Hee Jae; Kim, Jong Min; Park, Sang‐Hee Ko; Jin, Hyeong Min; Kim, Jaeup U.; Kim, Sang Ouk

doi:10.1002/adma.202370014

Cited by 4 publications

(4 citation statements)

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“…An additional contribution to the uniform film formation is the restricted vertical growth in the confined geometry due to the mechanical strain in the TMD crystals, as demonstrated in the synthesis of singlecrystalline TMD films. [34]…”

Section: Synthesis Of Vertical Tmd Heterostructuresmentioning

confidence: 99%

Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Yoo,

Byun,

Lee

et al. 2024

Advanced Materials

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Acquisition of defect‐free transition metal dichalcogenides (TMDs) channels with clean heterojunctions has been a critical issue in production of TMD‐based functional electronic devices. Conventional approaches have synthesized high quality TMDs and transferred them onto a target substrate, and then applied the typical device fabrication processes. Unfortunately, those processes cause physical defects and chemical contamination in the TMD channels. Here, we propose a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC). In the proposed synthesis, a uniform TMD layer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the grain boundaries of the Au layer and reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, rapid synthesis of homo‐ and hetero‐structured TMDs, and in‐situ TMD channel formation in the last stage of device fabrication. We reveal the mechanism of TMD growth by the TM‐accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111), and dependence of the growth rate on material species of chalcogen and TM. We demonstrate a 100% production yield of TMD‐based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness and chemical composition. CIC proposed in this study represents a breakthrough in the synthesis of TMD thin films and also in the TMD‐based electronic device fabrication, marking a substantial step towards practical next‐generation integrated electronics.This article is protected by copyright. All rights reserved

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Section: Synthesis Of Vertical Tmd Heterostructuresmentioning

confidence: 99%

Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Yoo,

Byun,

Lee

et al. 2024

Advanced Materials

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“…[25][26][27][28] The removal of such PQD surface components (i.e., surfacebound ligands, metal cations, and halides) leads to the generation of surface traps on the PQDs, such as uncoordinated Pb 2+ sites, which can act as non-radiative recombination centers and serve as penetration pathways for destructive species such as oxygen and water molecules. [29,30] Moreover, it is difficult to efficiently passivate these surface traps using conventional ionic short-chain ligands because of their labile and weak chemical bonds onto the ionic PQD surface; thus, limiting the improvement of optoelectrical properties and ambient film stability of CsPbI 3 PQD photovoltaic absorber. [31,32] Nevertheless, the conventional ligand exchange is inevitable for fabricating thick and conductive CsPbI 3 PQD photovoltaic absorbers.…”

Section: Doi: 101002/advs202301793mentioning

confidence: 99%

Stabilized Perovskite Quantum Dot Solids via Nonpolar Solvent Dispersible Covalent Ligands

et al. 2023

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The ligand exchange procedure of CsPbI3 perovskite quantum dots (PQDs) enables the fabrication of thick and conductive PQD solids that act as a photovoltaic absorber for solution‐processed thin‐film solar cells. However, the ligand‐exchanged CsPbI3 PQD solids suffer from deterioration in photovoltaic performance and ambient stability due to the surface traps, such as uncoordinated Pb2+ sites on the PQD surface, which are generated after the conventional ligand exchange process using ionic short‐chain ligands dissolved in polar solvents. Herein, a facile surface stabilization is demonstrated that can simultaneously improve the photovoltaic performance and ambient stability of CsPbI3 PQD photovoltaic absorber using covalent short‐chain triphenylphosphine oxide (TPPO) ligands dissolved in a nonpolar solvent. It is found that the TPPO ligand can be covalently bound to uncoordinated Pb2+ sites and the nonpolar solvent octane can completely preserve the PQD surface components. Owing to their synergetic effects, the CsPbI3 PQD photovoltaic absorber stabilized using the TPPO ligand solution dissolved in octane exhibit higher optoelectrical properties and ambient stability than the control absorber. Consequently, CsPbI3 PQD solar cells composed of PQD photovoltaic absorbers fabricated via surface stabilization strategy provide an improved power conversion efficiency of 15.4% and an enhanced device stability.

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“…. 16,17 Empirically, the ABX 3 -type perovskite can maintain a stable lattice structure when the t value is in the range of 0.8-1. 18 For CsPbI 3 NCs, the r A , r B and r X are the ionic radii of Cs, Pb and I, respectively.…”

Section: Introductionmentioning

confidence: 99%

Efficient open-air synthesis of Mg²⁺-doped CsPbI₃ nanocrystals for high-performance red LEDs

Zheng,

Ma,

et al. 2024

Nanoscale

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Atomically Flat, 2D Edge‐Directed Self‐Assembly of Block Copolymers (Adv. Mater. 3/2023)

Cited by 4 publications

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Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Stabilized Perovskite Quantum Dot Solids via Nonpolar Solvent Dispersible Covalent Ligands

Efficient open-air synthesis of Mg²⁺-doped CsPbI₃ nanocrystals for high-performance red LEDs

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Atomically Flat, 2D Edge‐Directed Self‐Assembly of Block Copolymers (Adv. Mater. 3/2023)

Cited by 4 publications

References 0 publications

Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Stabilized Perovskite Quantum Dot Solids via Nonpolar Solvent Dispersible Covalent Ligands

Efficient open-air synthesis of Mg2+-doped CsPbI3 nanocrystals for high-performance red LEDs

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Efficient open-air synthesis of Mg²⁺-doped CsPbI₃ nanocrystals for high-performance red LEDs