Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Wu, Liangmei; Wang, AiWei; Shi, Jinan; Yan, Jiahao; Zhou, Zhang; Bian, Ce; Ma, Jiajun; Ma, Ruisong; Liu, Hongtao; Chen, Jiancui; Huang, Yuan; Zhou, Wu; Bao, Lihong; Ouyang, Min; Pennycook, Stephen J.; Pantelides, Sokrates T.; Gao, Hongjun

doi:10.1038/s41565-021-00904-5

Cited by 146 publications

(229 citation statements)

References 45 publications

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“…By employing the high-quality interface and suitable band offset of vdW heterostructures (vdWHs), around 20 ns writing/erasing speed has been recently achieved in the vdWH based floating gate transistors (FGT), which is orders of magnitude faster than that of the traditional silicon-based floating gate devices (Fig. 26a) [791][792][793] . When such atomically thin 2D materials based floating gate transistor is used as the memory element, it is suitable for designing a programmable inverter and implementing more complex programmable logic circuits for future low-power electronics 794 .…”

Section: Neuromorphic Computingmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

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325

119

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Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications.In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background 物理化学学报 Acta Phys. -Chim. Sin. 2021, 37 (12), 2108017 (3 of 151) introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

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Section: Neuromorphic Computingmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

Self Cite

325

119

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“…The charge density N stored in the floating gate can be calculated by

N = \frac{Δ V \times C}{q}

where C is the capacitance between the floating gate and the control gate, and q is the elementary charge. [ 14 ] The C could be obtained by the formula

C = \frac{ε_{0} \times ε_{normalr}}{d}

where ε 0 is the vacuum permittivity, and ε r and d are the relative dielectric constant and the thickness of SiO 2 dielectric layer (ε r = 3.5, d = 300 nm). At V g‐max = 60 V, the Δ V value is 78 V and the storage charge density in the floating gate reaches 5.6 × 10 12 cm –2 , which can easily meet the practical storage requirements, [ 28 ] indicating the good charge‐storage capacity of the MBR device under illumination.…”

Section: Resultsmentioning

confidence: 99%

“…Operation speed, specifically the write speed, is another important parameter that limits the application of FGNVM. [ 14 ] In recent years, a few 2D vdW materials are used as the charge‐storage layer in non‐volatile memory. However, most of the memory devices show slow operation speed (Table S1, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…[12,13] It has been demonstrated that the FGNVM based on vdW heterostructure could enable atomically sharp interface for ultrafast operation at tens of nanosecond. [14][15][16] Nonetheless, the investigation is still in the initial stage and much research work has to be carried out before the commercialization of the vdW-heterostructure-based nonvolatile memory. In conventional FGNVM, the program/erase operations are accomplished by electrical stimuli.…”

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confidence: 99%

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Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

Lai

Zhou

et al. 2022

Advanced Materials

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inevitable, which reduces the reliability in high-density integration. Furthermore, uncontrollable interface is detrimental to the retention time and operation speed of the memory device. 2D van der Waals (vdW) crystals manifest ultra-thin layered structure, highly anisotropic in-and outof-plane conductivity and superior carrier migration, [6] which are promising to solve the above problems. Over the past decade, 2D vdW atomic crystals, such as graphene, MoS 2 , ReS 2 , etc., are widely used as the composed elements in FGNVM, [7][8][9][10][11] and extended device structures are proposed to improve the performance. [12,13] It has been demonstrated that the FGNVM based on vdW heterostructure could enable atomically sharp interface for ultrafast operation at tens of nanosecond. [14][15][16] Nonetheless, the investigation is still in the initial stage and much research work has to be carried out before the commercialization of the vdW-heterostructure-based nonvolatile memory. In conventional FGNVM, the program/erase operations are accomplished by electrical stimuli. The repetitive voltage drives not only increase the power consumption, but also deteriorate the reliability and stability of the device. [17] Light, as an efficient non-contact signal, has a small energy dissipation when traveling through the free space. Therefore, using light illumination as an auxiliary programming method is beneficial to realize long-distance quantum communication, while effectively minimizing the power consumption, so as to improve the reliability The development of floating-gate nonvolatile memory (FGNVM) is limited by the charge storage, retention and transfer ability of the charge-trapping layer.Here, it is demonstrated that due to the unique alternate inorganic/organic chain structure and superior optical sensitivity, an insulating 2D Ruddlesden-Popper perovskite (2D-RPP) layer can function both as an excellent chargestorage layer and a photosensitive layer. Optoelectronic memory composed of a MoS 2 /hBN/2D-RPP (MBR) van der Waals heterostructure is demonstrated. The MBR device exhibits unique light-controlled charge-storage characteristics, with maximum memory window up to 92 V, high on/off ratio of 10 4 , negligible degeneration over 10 3 s, >1000 program/erase cycles, and write speed of 500 µs. Dependent on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with up to 11 and 22 distinct resistance states, respectively. The optical program power for each bit is as low as 36/10 pJ for PPC/NPC. The results not only reveal the potential of 2D-RPP as a superior charge-storage medium in floating-gate memory, but also provides an effective strategy toward fast, low-power and stable optical multi-bit storage and neuromorphic computing.

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“…To address this vital bottleneck, Wu et al successfully constructed atomically sharp interface contacts between 2D InSe and hBN by the vdWs forces very recently (Figure 5f). [130] As shown in Figure 5g, such a nonvolatile floating gate memory implements the nanosecond time (≈20 ns) reading and writing, extremely high erase/write ratio (≈10 10 ), and very long storage time (10 years). This work lays a foundation for further investigation vdWs flat contact to achieve high-performance electronic properties.…”

Section: B) Typical Forming Processes In 15-18-layer H-bn-based Verti...mentioning

confidence: 99%

Electronic and Photoelectronic Memristors Based on 2D Materials

Tang

Wang

Gong

et al. 2022

Adv Elect Materials

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Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed.

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Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Cited by 146 publications

References 45 publications

Recent Progress on Two-Dimensional Materials

Recent Progress on Two-Dimensional Materials

Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

Electronic and Photoelectronic Memristors Based on 2D Materials

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