Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE

Jasik, A.; Sankowska, Iwona; Ratajczak, J.; Wawro, A.; Smoczyński, Dariusz; Czuba, Krzysztof; Wzorek, M.

doi:10.1016/j.cap.2018.11.017

Cited by 16 publications

(11 citation statements)

References 35 publications

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“…The summary of the three groups of material systems that were investigated is given in Table 1. The parameters used during the growth of homoepitaxial, metamorphic, and IMF GaSb materials as well as superlattices (SL) were described in Reference [7]. The growth conditions for AlSb and Al 0.5 Ga 0.5 As 0.05 Sb 0.95 materials are given in Reference [20].…”

Section: Methodsmentioning

confidence: 99%

“…Interfacial misfit (IMF) array is most frequently used for reducing the dislocation density in epitaxially grown materials [5,6]. This technique allows for relieving the strain energy by generation of 90 • periodic misfit dislocations at the GaSb/GaAs interface, thus decreasing the threading dislocation density (TDD) [7]. According to Huang et al, the dislocation density (DD) can be reduced by up to four orders of magnitude to about 7 × 10 5 cm −2 using IMF [5,8].…”

Section: Introductionmentioning

confidence: 99%

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On the Study of Dislocation Density in MBE GaSb-Based Structures

Jasik¹,

Smoczyński²,

Sankowska³

et al. 2020

Crystals

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The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray diffraction (HRXRD), etch pit density (EPD), and counting tapers on images obtained using atomic force microscopy (AFM). Additionally, high-resolution transmission electron microscopy (HRTEM) was used for selected samples. The density of dislocations determined using these methods varied, e.g., for IMF-GaSb/GaAs sample, were 6.5 × 108 cm−2, 2.2 × 106 cm−2, and 4.1 × 107 cm−2 obtained using the HRXRD, EPD, and AFM techniques, respectively. Thus, the value of TDD should be provided together with information about the measurement method. Nevertheless, the absolute value of TDD is not as essential as the credibility of the technique used for optimizing material growth. By testing material groups with known parameters, we established which techniques can be used for examining the dislocation density in GaSb-based structures.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the Study of Dislocation Density in MBE GaSb-Based Structures

Jasik¹,

Smoczyński²,

Sankowska³

et al. 2020

Crystals

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“…Before the beginning of the experiment, reference samples were prepared. Firstly, IMF-GaSb layers on GaAs substrates were grown under optimal (type I, #629) and non-optimal (type I, #554) IMF conditions to highlight the best result [8,24]. Secondly, AlSb growth conditions (type II, #642) and the application of the AlSb material as a buffer layer (type III, #643) were also verified.…”

Section: Methodsmentioning

confidence: 99%

“…There are two most commonly used approaches to reduce the dislocation density; namely, growth of the metamorphic material [5] and interfacial misfit dislocation (IMF) arrays [6]. The first one requires deposition of thick layer [7,8], whereas the second one offers almost full strain relaxation within few monolayers of the material [9]. The lowest threading dislocation density (TDD) of 5 × 10 5 cm −2 (7 × 10 5 cm −2 ), estimated from the plan-view TEM images (based on the etching and counting of the pits on the surface), was obtained for the GaSb/GaAs system by Huang et al [9,10].…”

Section: Introductionmentioning

confidence: 99%

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

et al. 2019

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We report on the role of AlSb material in the reduction of threading dislocation density (TDD) in the GaSb/AlSb/GaAs system. The AlSb layers were grown using low-temperature (LT) MBE, exploiting the interfacial misfit (IMF) dislocation array. AlSb layers with four different thicknesses in the range of 1–30 nm were investigated. The results showed the inhibiting role of LT-AlSb layers in the reduction of TDD. Values of TDD as low as 2.2 × 106 and 6.3 × 106 cm−2 for samples with thin and thick AlSb layers were obtained, respectively. The filtering role of AlSb material was proven despite the IMF-AlSb/GaAs interface’s imperfectness caused by the disturbance of a 90° dislocation periodic array by, most likely, 60° dislocations. The dislocation lines confined to the region of AlSb material were visible in HRTEM images. The highest crystal quality and smoother surface of 1.0 μm GaSb material were obtained using 9 nm thick AlSb interlayer. Unexpectedly, the comparative analysis of the results obtained for the GaSb/LT-AlSb/GaAs heterostructure and our best results for the GaSb/GaAs system showed that the latter can achieve both higher crystal quality and lower dislocation density.

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“…However, the strain in the SL can be successfully controlled by the type and the thickness of the interfaces [ 16 , 17 ]. Even for superlattices grown on GaAs substrate, (lattice mismatch between GaSb and GaAs is 7.8%) the dislocation density may be significantly reduced by using either the interfacial misfit array technique [ 14 , 18 ] or metamorphic buffer [ 19 ]. Nowadays, the InAs/GaSb superlattices are used more and more in the fabrication of focal plane arrays.…”

Section: Introductionmentioning

confidence: 99%

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

et al. 2021

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In this paper, he study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 106 cm−2 –#SL400, 1.01 × 106 cm−2 –#SL300, 0.51 × 106 cm−2 –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300.

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Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE

Cited by 16 publications

References 35 publications

On the Study of Dislocation Density in MBE GaSb-Based Structures

On the Study of Dislocation Density in MBE GaSb-Based Structures

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

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