Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering

Abstract

We demonstrate that the current flow in graphene can be guided on atomically thin current pathways by the engineering of Kekule-O distortions. A grain boundary in these distortions separates the system into topologically distinct regions and induces a ballistic domain-wall state. The state is independent of the orientation of the grain boundary with respect to the graphene sublattice and permits guiding the current on arbitrary paths. As the state is gapped, the current flow can be switched by electrostatic gates. Our findings are explained by a generalization of the Jackiw−Rebbi model, where the electrons behave in one region of the system as Fermions with an effective complex mass, making the device not only promising for technological applications but also a test-ground for concepts from high-energy physics. An atomic model supported by DFT calculations demonstrates that the system can be realized by decorating graphene with Ti atoms.