2017
DOI: 10.1007/s11431-016-9004-x
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Atomically thin InSe: A high mobility two-dimensional material

Abstract: Since silicon is limited by its physical properties, it is challenging and important to find candidate materials for high performance electronic devices. Two-dimensional (2D) semiconductor materials have attracted dramatically increasing interest due to their unique physical, electronic and optical properties and great promise for next generation high performance nanoelectronics and optoelectronic devices [1]. 2D semiconductor materials are compatible to silicon based COMS processing, such as photolithography … Show more

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Cited by 8 publications
(4 citation statements)
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“…This lower effective mass of InSe contributes to higher electron mobility, enhancing transport characteristics across a wide range of InSe thicknesses. 93,94 Furthermore, being a direct bandgap semiconductor with small enough bandgap energy with fewer layers (>6 nm), InSe is also capable of converting photoelectric signals in a wide spectral range of UV-visibleinfrared spectrum. In response, the research community has poured substantial effort into a systematic exploration and optimization of InSe device performance.…”
Section: Inse Advanced Device Applicationmentioning
confidence: 99%
“…This lower effective mass of InSe contributes to higher electron mobility, enhancing transport characteristics across a wide range of InSe thicknesses. 93,94 Furthermore, being a direct bandgap semiconductor with small enough bandgap energy with fewer layers (>6 nm), InSe is also capable of converting photoelectric signals in a wide spectral range of UV-visibleinfrared spectrum. In response, the research community has poured substantial effort into a systematic exploration and optimization of InSe device performance.…”
Section: Inse Advanced Device Applicationmentioning
confidence: 99%
“…Atomically flat dangling bond free surfaces of these materials are free from career scattering caused by surface roughness, which can lead to high performance optoelectronic devices with large on-off ratio ($10 8 ), photoresponsivity ($ 10 7 mAW À1 ), and career mobility (10 3 cm 2 V À1 s À1 ) at RT [7,18,19]. Both few layer BP and InSe based field effect transistors show comparable career mobility (10 3 cm 2 V À1 s À1 ) at RT suggesting they can outperform Si based CMOS at the scaling limits [20]. However, BP suffers from poor stability in air [21] and the polar nature of InSe leads to layer dependent Fröhlich interaction [22] and thus optical phonon limited career mobility.…”
Section: Introductionmentioning
confidence: 99%
“…Even though 2D black phosphorus (BP) has a comparable mobility 2 , it is extremely unstable in environmental conditions 3 , which limits the possibility of practical applications. The large surface-to-volume ratio and the atomic thickness of 2D materials make them ideal for electrostatic control and significant device downscaling for high-density integration 4 . Moreover, the ultraclean, dangling bond free smooth surfaces of these materials are less sensitive to carrier scattering.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, InSe provides a promising playground for studying low dimensional phenomena and for developing high mobility nanoelectronics 4,5 .…”
Section: Introductionmentioning
confidence: 99%