Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films

Kim, Ji-Woong; Kim, Hyegyeong; Lee, Min Young; Lee, Dooyong; Lee, Jisung; Jang, Yun Hyeong; Bae, Jong‐Sup; Lee, Jeong-Soo; Park, Sungkyun

doi:10.1088/0022-3727/48/39/395307

Cited by 20 publications

(21 citation statements)

References 29 publications

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“…2e. The O 1s peak can be divided into three peaks: O I , O II , and O III [35]. The lowest binding energy of O 1s (O I ) that appeared at 529.5 ± 0.1 eV is associated with metal-oxide binding (i.e., the Fe-O bond) [36].…”

Section: Resultsmentioning

confidence: 99%

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Xiao

Zhou

et al. 2020

Nanoscale Res Lett

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Hematite (α-Fe 2 O 3 ) material is regarded as a promising candidate for solar-driven water splitting because of the low cost, chemical stability, and appropriate bandgap; however, the corresponding system performances are limited by the poor electrical conductivity, short diffusion length of minority carrier, and sluggish oxygen evolution reaction. Here, we introduce the in situ Sn doping into the nanoworm-like α-Fe 2 O 3 film with ultrasonic spray pyrolysis method. We show that the current density at 1.23 V vs. RHE (J ph@1.23V ) under one-sun illumination can be improved from 10 to 130 μA/cm 2 after optimizing the Sn dopant density. Moreover, J ph@1.23V can be further enhanced 25folds compared to the untreated counterpart via the post-rapid thermal process (RTP), which is used to introduce the defect doping of oxygen vacancy. Photoelectrochemical impedance spectrum and Mott-Schottky analysis indicate that the performance improvement can be ascribed to the increased carrier density and the decreased resistances for the charge trapping on the surface states and the surface charge transferring into the electrolyte. Xray photoelectron spectrum and X-ray diffraction confirm the existence of Sn and oxygen vacancy, and the potential influences of varying levels of Sn doping and oxygen vacancy are discussed. Our work points out one universal approach to efficiently improve the photoelectrochemical performances of the metal oxide semiconductors.

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Section: Resultsmentioning

confidence: 99%

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Xiao

Zhou

et al. 2020

Nanoscale Res Lett

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“…Figure shows the core‐level X‐ray photoelectron spectra of (A) Fe 2 p , (B) Sn 3 d , and (C) O 1 s states of the Sn‐doped Fe 2 O 3 powders. The vertical dotted lines indicate the reference binding energies . In order to obtain quantitative information, the peaks have to be deconvoluted after proper background subtraction .…”

Section: Resultsmentioning

confidence: 99%

“…The vertical dotted lines indicate the reference binding energies. 10,[35][36][37][38][39][40] In order to obtain quantitative information, the peaks have to be deconvoluted after proper background subtraction. 41 However, for the Fe 2p spectra in Fe 2 O 3 , the presence of satellite peaks (718.8AE 0.1 eV for Fe 3+ and 714.7AE0.1 eV for Fe 2+ ) 35 due to the strong hybridization of Fe 3d-O 2p 42 makes it difficult to obtain proper background estimation.…”

Section: Resultsmentioning

confidence: 99%

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The effect of Fe²⁺ state in electrical property variations of Sn‐doped hematite powders

et al. 2017

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The structural, electrical, and chemical properties of Sn‐doped Fe2O3 powders were investigated. Various quantities of Sn‐doped Fe2O3 powders were synthesized using solid‐state reactions. Rietveld analysis for the powders that were doped below 2% revealed a phase‐pure Sn‐doped Fe2O3 structure (i.e., identical to Fe2O3 structure). Alternatively, the analysis for the powders that were doped more than 3% exhibited secondary phase. The unit cell volume and electrical conductivity of the phase‐pure samples increased with an increase in the doping concentration. X‐ray photoelectron spectroscopy measurements showed an increased Fe2+ state with the increase in Sn doping concentration. Therefore, the improved electrical conductivity and unit cell volume with the increase in doping concentration of the phase‐pure powders might be related to the increased Fe2+ state.

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“…Note that E g of a-ITO thin films shows an abrupt change above 200 °C, where polycrystalline ITO starts forming, as reported in Refs. 18,19 . On the other hand, E g of poly-ITO thin films decreases gradually with increasing temperature, as also shown in Fig.…”

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confidence: 99%

High-temperature optical properties of indium tin oxide thin-films

Kim

Shrestha

Souri

et al. 2020

Sci Rep

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Indium tin oxide (ITO) is one of the most widely used transparent conductors in optoelectronic device applications. We investigated the optical properties of ITO thin films at high temperatures up to 800 °C using spectroscopic ellipsometry. As temperature increases, amorphous ITO thin films undergo a phase transition at ~ 200 °C and develop polycrystalline phases with increased optical gap energies. The optical gap energies of both polycrystalline and epitaxial ITO thin films decrease with increasing temperature due to electron-phonon interactions. Depending on the background oxygen partial pressure, however, we observed that the optical gap energies exhibit reversible changes, implying that the oxidation and reduction processes occur vigorously due to the low oxidation and reduction potential energies of the ITO thin films at high temperatures. This result suggests that the electronic structure of ITO thin films strongly depends on temperature and oxygen partial pressure while they remain optically transparent, i.e., optical gap energies > 3.6 eV.

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Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films

Cited by 20 publications

References 29 publications

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

The effect of Fe²⁺ state in electrical property variations of Sn‐doped hematite powders

High-temperature optical properties of indium tin oxide thin-films

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Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films

Cited by 20 publications

References 29 publications

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances

The effect of Fe2+ state in electrical property variations of Sn‐doped hematite powders

High-temperature optical properties of indium tin oxide thin-films

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The effect of Fe²⁺ state in electrical property variations of Sn‐doped hematite powders