Atomistic mechanism effects on the growth of GaAsBi and GaAs nanowires

Blel, S.; Bilel, C.

doi:10.1016/j.ssc.2022.114722

“…However, growth of high-quality GaAsBi alloys still remains a challenge because Bi desorbs from the growing surface at growth temperatures (T g ) that are typical for epitaxy of III–V compounds. To circumvent this problem, GaAsBi epilayers are usually fabricated under non-equilibrium growth conditions at T g < 400 °C 3 , 12 , which leads to spatial fluctuations of Bi concentration and, therefore, local changes of the material’s bandgap 13 . Moreover, because of a much larger size of Bi atoms as compared with As atoms, the obtained alloy is highly mismatched and experiences inherent inner strain.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Jansson

¹

,

Nosenko

²

,

Rudko

³

et al. 2023

Sci Rep

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GaAsBi nanowires represent a novel and promising material platform for future nano-photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a challenge due to a large miscibility gap between GaAs and GaBi. In this work we investigate effects of Bi incorporation on lattice dynamics and carrier recombination processes in GaAs/GaAsBi core/shell nanowires grown by molecular-beam epitaxy. By employing photoluminescence (PL), PL excitation, and Raman scattering spectroscopies complemented by scanning electron microscopy, we show that increasing Bi-beam equivalent pressure (BEP) during the growth does not necessarily result in a higher alloy composition but largely affects the carrier localization in GaAsBi. Specifically, it is found that under high BEP, bismuth tends either to be expelled from a nanowire shell towards its surface or to form larger clusters within the GaAsBi shell. Due to these two processes the bandgap of the Bi-containing shell remains practically independent of the Bi BEP, while the emission spectra of the NWs experience a significant red shift under increased Bi supply as a result of the localization effect.

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“…However, growth of high-quality GaAsBi alloys still remains a challenge because Bi desorbs from the growing surface at growth temperatures (T g ) that are typical for epitaxy of III-V compounds. To circumvent this problem, GaAsBi epilayers are usually fabricated under non-equilibrium growth conditions at T g < 400 o C [3,12], which leads to spatial uctuations of Bi concentration and, therefore, local changes of the material's bandgap [13]. Moreover, because of a much larger size of Bi atoms as compared with As atoms, the obtained alloy is highly mismatched and experiences inherent inner strain.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Jansson

¹

,

Nosenko

²

,

Rudko

³

et al. 2023

Preprint

0

View full text Add to dashboard Cite

GaAsBi nanowires represent a novel and promising material platform for future nano-photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a challenge due to a large miscibility gap between GaAs and GaBi. In this work we investigate effects of Bi incorporation on lattice dynamics and carrier recombination processes in GaAs/GaAsBi core/shell nanowires grown by molecular-beam epitaxy. By employing photoluminescence (PL), PL excitation, and Raman scattering spectroscopies complemented by scanning electron microscopy, we show that increasing Bi-beam equivalent pressure (BEP) during the growth does not necessarily result in a higher alloy composition but largely affects the carrier localization in GaAsBi. Specifically, it is found that under high BEP, bismuth tends either to be expelled from a nanowire shell towards its surface or to form larger clusters within the GaAsBi shell. Due to these two processes the bandgap of the Bi-containing shell remains practically independent of the Bi BEP, while the emission spectra of the NWs experience a significant red shift under increased Bi supply as a result of the localization effect.

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Metal nanowires grown on Cu (100) substrate

Blel

2024

Materials Letters

0

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Atomistic mechanism effects on the growth of GaAsBi and GaAs nanowires

Cited by 3 publications

References 28 publications

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Metal nanowires grown on Cu (100) substrate

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