2014
DOI: 10.1103/physrevb.89.235311
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Atomistic modeling of coupled electron-phonon transport in nanowire transistors

Abstract: Self-heating effects are investigated in ultrascaled gate-all-around silicon nanowire field-effect transistors (NWFETs) using a full-band and atomistic quantum transport simulator where electron and phonon transport are fully coupled. The nonequilibrium Green's function formalism is used for that purpose, within a nearest-neighbor sp 3 d 5 s * tight-binding basis for electrons and a modified valence-force-field model for phonons. Electron-phonon and phonon-electron interactions are taken into account through s… Show more

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Cited by 51 publications
(73 citation statements)
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“…For device calculations, inclusion of EPC leads to a very substantial complication of the calculations, when treated with NEGF [10,12,14]. The MD-Landauer method could, on the other hand, be included in device calculations without significant extra computational load.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…For device calculations, inclusion of EPC leads to a very substantial complication of the calculations, when treated with NEGF [10,12,14]. The MD-Landauer method could, on the other hand, be included in device calculations without significant extra computational load.…”
Section: Discussionmentioning
confidence: 99%
“…However, the resulting equations are numerically very challenging and approximations need to be applied. Approximate methods include lowest order expansions of the inelastic current [12,13] or approximations to the EPC self-energy [10,14].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, accounting for all the relevant quantum manybody interactions for such systems composed of thousands of atoms is computationally prohibitively expensive. 12,13 For example, simulation of photocurrent in a photovoltaic cell requires to take into account electronic structure of the cell, electron-photon interactions responsible for photoexcitation, by electron-hole recombination processes, emission and absorption of phonons and scattering by disorder.…”
Section: Simulation Toolsmentioning
confidence: 99%
“…For instance, it has been shown theoretically that electron-phonon scattering drastically influences the current characteristics in ultimate nanowire transistors [1]. The miniaturization tends to enhance also the impact of thermal effects, and accurate description of phonon scattering at the nanoscale is becoming crucial to understand and manage thermal dissipation in devices and circuits [2]. In modern optoelectronic devices like new generation solar cells, it is also essential to consider appropriate models of light-matter interaction at the microscopic level [3,4].…”
mentioning
confidence: 99%