Atomistic modeling of epitaxial growth of semiconductor materials

Martín-Bragado, Ignacio; Sarikov, Andrey

doi:10.1016/j.mssp.2015.08.027

Cited by 4 publications

(3 citation statements)

References 36 publications

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“…To overcome the limitations of non-lattice KMC models in a computationally efficient code, Martin-Bragado et al developed a lattice KMC model that reproduces different planar SPER velocities and the formation of defects during regrowth [94,[111][112][113]. Stress information can be extracted from finite-element methods [111] and fed back and forth to the lattice KMC code.…”

Section: Atomistic Kmc Modelsmentioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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Section: Atomistic Kmc Modelsmentioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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“…To begin with, wafers are usually warped before being cut into individual devices [41,42]. Mismatch of material and thermal properties during epitaxial growth warp the wafer's morphology [43], while epitaxial growth is indispensable [44][45][46]. Contact between the imprint template and wafer is hindered by the warped substrate, which destroys the prerequisite for a successful imprint [47][48][49].…”

Section: Introductionmentioning

confidence: 99%

Electric-driven flexible-roller nanoimprint lithography on the stress-sensitive warped wafer

Fan

Wang

Sun

et al. 2023

Int. J. Extrem. Manuf.

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Surface nanopatterning of semiconductor optoelectronic devices is recognized powerful for improving their quality and performance. However, photoelectric devices' inherent stress sensitivity and inevitable warpage pose a huge challenge on fabricating nanostructures large-scale. Electric-driven flexible-roller nanoimprint lithography for nanopatterning the optoelectronic wafer is proposed in this study. The flexible nanoimprint template twining around a roller is continuously released and recovered, controlled by the roller’s simple motion. The electric field between the template and the substrate provides the all driving force. Under the electric field, the contact line of the template and the substrate gradually moves with the roller to enable scanning and adapting to the entire warped substrate. On the other hand, the driving force generated from electric field is acted on the substrate surface, so the substrate is free from external pressure. Furthermore, liquid resist completely fills in microcavities on the template by powerful electric field force, to ensure the fidelity of the nanostructures. The proposed nanoimprint technology is validated on the prototype. Finally, nano-grating structures are fabricated on a gallium nitride light-emitting diode chip using the proposed solution, achieving the polarization of the light source.

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“…SiGe has a great relevance in the semiconductor industry since it was first used in the 45 nm strained-Si CMOS technology node [1], to modern 3D structures such as quantum dots in optoelectronics [1], [2]. Further advances in these fields require an accurate knowledge of phenomena occurring at the atomic level, and atomistic simulations can be very helpful in this task [3]. Classical molecular dynamics (CMD) simulations offer a good balance between computational cost, system size, and simulation time.…”

Section: Introductionmentioning

confidence: 99%

Modeling SiGe Through Classical Molecular Dynamics Simulations: Chasing an Appropriate Empirical Potential

Martin

Santos

López

et al. 2018

2018 Spanish Conference on Electron Devices (CDE)

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We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), (100)2 × 1 and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces.

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Atomistic modeling of epitaxial growth of semiconductor materials

Cited by 4 publications

References 36 publications

Improved physical models for advanced silicon device processing

Improved physical models for advanced silicon device processing

Electric-driven flexible-roller nanoimprint lithography on the stress-sensitive warped wafer

Modeling SiGe Through Classical Molecular Dynamics Simulations: Chasing an Appropriate Empirical Potential

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