Atomistic modeling of step formation and step bunching at the Ge(105) surface

Cereda, S.; Montalenti, Francesco; Miglio, Leo

doi:10.1016/j.susc.2005.06.016

Cited by 20 publications

(23 citation statements)

References 17 publications

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“…E s ¼ rð2À e þ À s Þ is the step or edge contribution. r is the radius of the circularsection embryo, is the apex angle of the f105g facet ffi =2, À s is the f105g step energy % 0:12 eV=nm [16,17], and À e is the specific edge energy at the junction of adjacent f105g planes. The elastic contribution ÁE el ¼ E el;f À E el;WL is found by finite element methods.…”

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confidence: 99%

Kinetically Suppressed Ostwald Ripening ofGe/Si(100)Hut Clusters

2008

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Low area density Ge/Si(100) hut cluster ensembles are stable during days-long growth temperature anneals. Real-time scanning tunneling microscopy shows that all islands grow slowly at a decreasing rate throughout the anneal. Island growth depletes the Ge supersaturation that, in turn, reduces the island growth rate. A mean-field facet nucleation and growth model quantitatively predicts the observed growth rate. It shows that Ostwald ripening is kinetically suppressed for Ge supersaturations high enough to support a critical nucleus size less than the smallest facet.

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confidence: 99%

Kinetically Suppressed Ostwald Ripening ofGe/Si(100)Hut Clusters

2008

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“…In studying the evolution of the ͕105͖ pyramids facets, the major role is played by T steps. 32 Observing carefully the configuration reported in Fig. 6͑a͒, the stripe formed according to our model is bounded on its left side precisely by the stablest T step indicated by the classical-potential calculations of Ref.…”

Section: Step Flow At Ge Pyramids Facetsmentioning

confidence: 51%

“…6͑a͒, the stripe formed according to our model is bounded on its left side precisely by the stablest T step indicated by the classical-potential calculations of Ref. 32. Such step is easily recognizable, due to the characteristic crossing of two Uss, highlighted by continuous black lines in Fig.…”

Section: Step Flow At Ge Pyramids Facetsmentioning

confidence: 52%

“…Depending on the edge position with respect to the underlying substrate, different step geometries can be obtained; for example, with step edges along ͓010͔ directions, two different types, called T and H in Ref. 32, are possible. For T steps, the tails of the Uss in the upper terrace point toward the edge, while for H steps, it is the head of the Uss which faces the edge.…”

Section: Step Flow At Ge Pyramids Facetsmentioning

confidence: 99%

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Atomic-scale modeling of next-layer nucleation and step flow at the Ge(105) rebonded-step surface

Cereda

Montalenti

2007

Phys. Rev. B

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Based on ab initio calculations, we propose an atomic-scale path leading to the growth of a new layer on the rebonded-step reconstructed Ge͑105͒ surface. We show that the nucleation of ͑001͒-like dimers triggers the formation of low-energy adtrimers within the surface unit cell. The presence of adjacent trimers and the arrival of a further adatom initiate a fast kinetic process, allowing the perfect rebonded-step structure to be rebuilt. After repeating some of the calculations under compressive-strain conditions, we discuss position-dependent nucleation in ͑105͒ Ge pyramid on Si͑001͒, finding solid theoretical justification for the experimentally observed preferential nucleation at the top of Ge islands, followed by fast step flow.

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“…Given the intrinsic complexity of the problem and the lack of a robust approach for proposing and sorting step models, the pioneering study 7 of steps on Si͑001͒ was followed by only a few reports of step structures on other semiconductor surfaces. 8,9 For steps of given height and direction on stable high-index semiconductor surfaces, the structure determination problem is further complicated by the fact that the location of the step relative to the reconstructed unit cell on terraces and the number of atoms contained in the step region are not known a priori.…”

Section: Introductionmentioning

confidence: 99%

Evolutionary approach for finding the atomic structure of steps on stable crystal surfaces

Briggs

Ciobanu

2007

Phys. Rev. B

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The problem addressed here can be concisely formulated as follows: Given a stable surface orientation with a known reconstruction and given a direction in the plane of this surface, find the atomic structure of the steps oriented along that direction. We report a robust and generally applicable variable-number genetic algorithm for determining the atomic configuration of crystallographic steps, and exemplify it by finding structures for several types of monatomic steps on Si͑114͒-2 ϫ 1. We show that the location of the step edge with respect to the terrace reconstructions, the step width ͑number of atoms͒, and the positions of the atoms in the step region can all be simultaneously determined.

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Atomistic modeling of step formation and step bunching at the Ge(105) surface

Cited by 20 publications

References 17 publications

Kinetically Suppressed Ostwald Ripening ofGe/Si(100)Hut Clusters

Kinetically Suppressed Ostwald Ripening ofGe/Si(100)Hut Clusters

Atomic-scale modeling of next-layer nucleation and step flow at the Ge(105) rebonded-step surface

Evolutionary approach for finding the atomic structure of steps on stable crystal surfaces

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