2008
DOI: 10.1007/s10820-008-9109-x
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Atomistic simulation studies of complex carbon and silicon systems using environment-dependent tight-binding potentials

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Cited by 5 publications
(3 citation statements)
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References 78 publications
(104 reference statements)
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“…Figure S12a shows a TEM image of PDA with irregular contours, the corresponding electron diffraction (ED) of the PDA can be seen in Figure S12b, and the ED image is an average of images taken at different PDA positions and corresponds to an amorphous material, which shows large and few peaks in ED. The peaks extracted from ED can be seen in Figure S12c in the inserted graph and their respective distances are 3.65 Å (2.74 nm –1 ), 2.02 Å (4.95 nm –1 ), and 1.17 Å (8.56 nm –1 ) and these distances correspond to amorphous carbon. , Figure S12c shows the graph corresponding to the electron pair distribution function (ePDF) of the PDA and the distances measured again correspond to amorphous carbon, 1.37, 2.54, 3.79, and 4.91 Å.…”
Section: Resultsmentioning
confidence: 95%
“…Figure S12a shows a TEM image of PDA with irregular contours, the corresponding electron diffraction (ED) of the PDA can be seen in Figure S12b, and the ED image is an average of images taken at different PDA positions and corresponds to an amorphous material, which shows large and few peaks in ED. The peaks extracted from ED can be seen in Figure S12c in the inserted graph and their respective distances are 3.65 Å (2.74 nm –1 ), 2.02 Å (4.95 nm –1 ), and 1.17 Å (8.56 nm –1 ) and these distances correspond to amorphous carbon. , Figure S12c shows the graph corresponding to the electron pair distribution function (ePDF) of the PDA and the distances measured again correspond to amorphous carbon, 1.37, 2.54, 3.79, and 4.91 Å.…”
Section: Resultsmentioning
confidence: 95%
“…In our numerical calculations, we assume the values of for silicon as given in Ref. 52 .
Figure 1 Schematic of a distorted silicene honeycomb lattice, lattice vectors, and inter-atomic couplings.
…”
Section: Hamiltonian Derivationmentioning
confidence: 99%
“…The 5-8-5 defect is frequently observed in the di-vacancy configuration in graphene samples [23][24][25][26][79][80][81][82], which can be created either by coalescence of two single vacancies or by removing two neighboring atoms as sketched in figure 4(b). Previous simulations indicate that the formation energy of a di-vacancy is of the same order as that of a single vacancy (about 8 eV) [67,68].…”
Section: Single Defectsmentioning
confidence: 99%