Attempts to growth of undoped CdTe single crystals with high electrical resistivity

Rudolph, P.; Kawasaki, Shigeo; Yamashita, Shun; Yamamoto, Shingo; Usuki, Y.; Konagaya, Y.; Matada, S.; Fukuda, Tsuguo

doi:10.1016/0022-0248(95)00607-9

Cited by 20 publications

(4 citation statements)

References 19 publications

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“…Many attempts have been made to remove Te-inclusions and precipitates by annealing CdTe and CZT under Cd overpressure. This usually results in decrease in resistivity [63][64][65][66], consistent with our results. Figure 8 shows that Cd 2+ i and V 2+ Te have similar formation energies.…”

Section: Energetics Of Native Defectssupporting

confidence: 92%

What causes high resistivity in CdTe

Biswas¹,

Du²

2012

New J. Phys.

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Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donorspecific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

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Section: Energetics Of Native Defectssupporting

confidence: 92%

What causes high resistivity in CdTe

Biswas¹,

Du²

2012

New J. Phys.

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“…For instance, high-resistivy undoped CdTe we obtained under strong in-situ control of stoichiometry [18] that can be supported additionally by using of very high inert gas pressure [37] because of the CEP shift towards stoichiometry under such conditions [13]. resistivity.…”

Section: Figmentioning

confidence: 99%

“…Total concentration of the excess components in precipitates in CdTe VB crystals grown from different melt solutions vs. deviation from stoichiometry determined by IR extinction analysis [18].…”

Section: Figmentioning

confidence: 99%

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Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Rudolph

2003

Cryst. Res. Technol.

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136

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An overview on the defect knowledge in IV‐VI (PbTe), II‐VI (CdTe) and III‐V (GaAs, InP) semiconductor compound crystals in dependence on non‐stoichiometric growth conditions from the melt is given. The treatment starts with the today's informations about the phase relations, i.e. the shape of the existence regions versus stoichiometry. Non‐stoichiometry related melt growth phenomena are specified. After that selected intrinsic point defects and their influence on the impurity incorporation as function of deviation from stoichiometry are discussed. The interaction processes between native point defects and dislocation formation is touched. Finally, the serious mechanisms of precipitation and inclusion incorporation are shown. Possible measures of defect minimization are mentioned.

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Thermodynamics, Origin, and Control of Defects

Rudolph

2008

Crystal Growth Technology

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Attempts to growth of undoped CdTe single crystals with high electrical resistivity

Cited by 20 publications

References 19 publications

What causes high resistivity in CdTe

What causes high resistivity in CdTe

Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Thermodynamics, Origin, and Control of Defects

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