Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Abstract

In this study, I investigated the effect of work function (ϕm) of AuxAg1-x (x=0, 0.22, 0.37, 0.71 and 1) on the Au-Ag/n-GaAs Schottky diode (SD) parameters. Ag, Au and three alloys with different compositions deposited on n-GaAs substrates by thermal evaporation method. Surface morphologies of the samples were investigated by atomic force microscope (AFM). Elementel compositions of Schottky metals were conducted by the energy dispersive X-ray spectroscop (EDX). Current-voltage (I-V) and capacitance-voltage (C-V) measurements performed at room temperature.SD parameters such as barrier height (Φb0), ideality factor (n), series resistance (Rs), and interface state density (Dit) of the SD's were calculated from the obtained I-V and C-V data. Experimental results showed that all calculated SD parameters depends on alloy composition. Lowest mean barrier height value was found as 0.789±0.022 eV for Au/n-GaAs SDs and the highest value was determined 0.847±0.008 eV for Au0.71Ag0.29/n-GaAs SDs from I-V measurements. Weak dependencies of barrier height to ϕm was exist and gap state parameter (S) determined as 0.0526. S value was close to the Bardeen limit (S=0), and indicates that Fermi level was strongly pinned in Au-Ag/n-GaAs SDs. Also, main SD parameters like series resistance (Rs), ideality factor (n), reverse bias barrier height (Φb RB ), doping density (Nd) and density of interface states (Dit) were calculated via using different methods from I-V and C-V measurement results. In addition, to determine the leakage current mechanism Poole-Frenkel emission (PFE) and Schottky emission (SE) models applied on reverse bias I-V data.

Effect of Intercalated LiF on Interface Contact Characteristics of MoS2 Field Effect Transistor: A First‐Principles Study

“…Work function ( W F ) [ 36 ] can be expressed as W F = E 0 ‐ E F , where E 0 is the electrostatic potential of vacuum, and E F is the Fermi level. The calculated work functions of Au, MoS 2 , and Au/LiF are 5.29, 5.87, 5.25 eV, respectively.…”

“…Where 𝜌 MoS2 , 𝜌 Au , 𝜌 Au∕MoS2 , 𝜌 Au∕LiF∕MoS2 , and, 𝜌 LiF are the plane average charge densities of MoS 2 , Au, Au/MoS 2 , Au/LiF/MoS 2 , and LiF, respectively. Work function (W F ) [36] can be expressed as have the electrostatic potential difference of 3.3 eV with intercalated LiF (monolayer), implying a change of the electrostatic field between the interfacial layers.…”

Farklı Metal/n-Si Kontakların Sayısal Olarak Modellenmesi ve Simülasyonu

“…Hatta metal ve yarıiletken birleştiğinde oluşan ara yüz bileşiminin engel yüksekliği üzerinde etkisi ara yüzey yapısından daha etkili olduğu bildirilmektedir (Aboelfotoh, 1987). Belirli bir amaca hizmet edecek diyotların üretimi sırasında diyot parametrelerinin belirlenmesi için farklı iş fonksiyonlarına sahip metallerin veya yarıiletkenlerin kullanılması genellikle yeterlidir (Abdullah Akkaya, 2021;Myburg, Auret, Meyer, Louw, & Van Staden, 1998). İş fonksiyonu, malzeme yüzeylerinin en temel özelliklerinden biridir ve metalyarıiletken kontakların elektriksel özelliklerini doğrudan etkilemektedir (Ishii, Matsumura, Sakai, & Sakata, 2001) Üretilen bir devre elemanının tam kapasite ile çalışabilmesi, devreyi oluşturan temel yapının, bütün özelliklerinin bilinmesine bağlıdır.…”

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

“…19 Specifically, surface defects can increase the effective Schottky barrier height (SBH, Φ B ) by causing surface Fermi level pinning. 19,20 Thus, surface treatment was performed to alleviate the surface state-induced characteristic of semiconductors. 19 It was found that for InGaP/InGaAs/Ge triple-junction solar cells, the treatment of the AlInP window layer with (NH 4 ) 2 S x solution resulted in about 3% increase in the conversion efficiency.…”