Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure

Plante, M.C.; LaPierre, Ray

doi:10.1016/j.jcrysgro.2007.10.050

Cited by 85 publications

(97 citation statements)

References 29 publications

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“…For example, there are a number of investigations where the diameter of the droplet is considerably larger than the solid-liquid interface (many of these are self-catalysed wires), and the structure is found to be predominantly ZB [28][29][30][31][32][33] . In contrast, most studies which find predominantly WZ structure find a contact angle close to 90°(in cases where contact angle was shown or reported) 7,12,34,35 . In addition, a number of studies also found a greater density of ZB defects/regions near the foot of nanowires 12,16,36,37 .…”

Section: Methodsmentioning

confidence: 83%

“…In contrast, most studies which find predominantly WZ structure find a contact angle close to 90°(in cases where contact angle was shown or reported) 7,12,34,35 . In addition, a number of studies also found a greater density of ZB defects/regions near the foot of nanowires 12,16,36,37 . This is likely due to the fact that during the initial stages of nanowire growth the contact angle is much less than 90°, since the catalysing droplet is situated on a flat surface and the angle α in equation 2 is therefore equal to zero.…”

Section: Methodsmentioning

confidence: 83%

“…While these approaches have the advantage of being able to quickly cover a large area (order cm 2 ), they have the disadvantage of resulting in droplets having random location and a large distribution of diameter. These effects are known to result in a distribution in wire shape and crystal structure 7,[10][11][12] . For application purposes, consistency in wire shape is likely to be very important and minimisation of the density of stacking faults is also preferable [13][14][15] .…”

Section: Introductionmentioning

confidence: 99%

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Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

O'Dowd

Wójtowicz

Rouvimov

et al. 2014

Journal of Applied Physics

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GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid (VLS) mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out.This revealed that there were two categories of nanowire present, with differing height and tapering angle.The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission Electron Microscopy (TEM) analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices. a) Electronic mail: odowdbj@tcd.ie

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Section: Methodsmentioning

confidence: 83%

Section: Methodsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

O'Dowd

Wójtowicz

Rouvimov

et al. 2014

Journal of Applied Physics

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“…At lower growth temperature, the nanowires grown are cylindrical shape whereas at high temperature, visualizing the hexagonal cross-section with the {110} side facets is clearly defined. Plante and LaPierre (2008) already investigated the faceting GaAs nanowire sidewall using molecular beam epitaxial growth. They conclude that tapered tip exhibit different facets than the base of the wire during planar growth of the nanowire sidewall (M. C. Plante and R. R. LaPierre, 2008).…”

Section: Resultsmentioning

confidence: 99%

Modern Applied Science, Vol. 3, No. 7, July 2009, all in one file, Part A

MAS¹

2009

MAS

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“…The radial growth of nanowires involves formation and propagation of monoatomic steps at atomically smooth nanowire sidewalls. These processes determine not only the radial growth rate of nanowires, but also stability of nanowires against shape transformations [4,5]. Similarly, the shape conserving growth of faceted 3D islands, such as hut-like 3D Ge islands on Si(001), is known to proceed by nucleation and propagation of elementary steps at the island facets, whereas bunching of the steps at the island facets is considered as the most plausible pathway for the experimentally observed shape transformation of the hut-clusters to dome-shaped 3D islands [6,7].…”

Section: Introductionmentioning

confidence: 99%

Kinetics of Step Propagation at the Sidewalls of 3D Islands and Nanowires

Filimonov

Hervieu

2014

e-J. Surf. Sci. Nanotechnol.

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Models of adatom surface diffusion and incorporation at the sidewalls of nanowires and 3D islands are proposed. The models account for the presence of an atomic step on the sidewall facet and for the adatom transport from the substrate to the sidewall. Peculiarities of the potential relief for migrating adatoms as well as the effect of step permeability are taken into account. It is shown that kinetics of the step propagation at the nanowire sidewall is affected by the presence of a strong sink for adatoms at the nanowire top facet and by adatom desorption from the sidewall. As a consequence, survival of the step at the nanowire sidewall depends strongly on the nanowire length. For 3D islands it is shown that the adatom concentration at the island apex can be considerable even in the absence of the deposition flux provided that the step is permeable for adatoms and there exists substantial material transfer from the wetting layer to the island facet. This favors formation of new steps at the island apex and may trigger the morphological transition of the 3D island.

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Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure

Cited by 85 publications

References 29 publications

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

Modern Applied Science, Vol. 3, No. 7, July 2009, all in one file, Part A

Kinetics of Step Propagation at the Sidewalls of 3D Islands and Nanowires

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