Au-Assisted Substrate-Faceting for Inclined Nanowire Growth

Kang, Jung-Hyun; Krizek, Filip; Załuska‐Kotur, Magdalena A.; Krogstrup, Peter; Kacman, P.; Beidenkopf, Haim; Shtrikman, Hadas

doi:10.1021/acs.nanolett.8b00853

Cited by 8 publications

(14 citation statements)

References 34 publications

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“…In fact, the junction shapes in some of the systems have been reported very recently. 24 In summary, we have shown that the nanowires grown by the vapor-liquid-solid approach can be engineered to form junctions of a desirable shape by carefully tuning the experimental conditions.…”

mentioning

confidence: 93%

Collector Droplet Behavior during Formation of Nanowire Junctions

Wang

Šikola

Kolı́bal

2020

J. Phys. Chem. Lett.

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Formation of nanowire networks is an appealing strategy for demonstration of novel phenomena at nanoscale, e.g. detection of Majorana fermions, as well as an essential step towards realization of complex nanowire-based architectures. However, a detailed description of mechanisms taking place during growth of such complex structures is lacking. Here, the experimental observations of gold-catalyzed germanium nanowire junction formation are explained utilizing phase field modelling corroborated with real-time in-situ scanning electron microscopy. When the two nanowires collide head-on during the growth, we observe two scenarios: (i) two catalytic droplets merge into one and the growth continues as a single nanowire, or (ii) the droplets merge and subsequently split again, giving rise to the growth of two daughter nanowires. Both the experiments and modelling indicate critical importance of the liquid-solid growth interface anisotropy and the growth kinetics in facilitating the structural transition during the nanowire merging process.

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mentioning

confidence: 93%

Collector Droplet Behavior during Formation of Nanowire Junctions

Wang

Šikola

Kolı́bal

2020

J. Phys. Chem. Lett.

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“…This is due to faceting by the Au-induced formation of microcraters with two mirror-symmetric opposite {111}B side facets. 15 …”

Section: Introductionmentioning

confidence: 99%

“…This allows the even coverage of multiple arms of the coated NW intersection. , On the (001) substrate, inclined InAs NWs can emerge only in two different ⟨111⟩ directions, making this substrate particularly suitable for the formation of regular NW networks. This is due to faceting by the Au-induced formation of microcraters with two mirror-symmetric opposite {111}B side facets …”

Section: Introductionmentioning

confidence: 99%

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires

et al. 2021

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The cross-sectional dimensions of nanowires set the quantization conditions for the electronic subbands they host. These can be used as a platform to realize one-dimesional topological superconductivity. Here we develop a protocol that forces such nanowires to kink and change their growth direction. Consequently, a thin rectangular nanoplate is formed, which gradually converges into a very thin square tip. We characterize the resulting tapered nanowires structurally and spectroscopically by scanning and transmission electron microscopy and scanning tunneling microscopy and spectroscopy and model their growth. A unique structure composed of ordered rows of atoms on the (110) facet of the nanoflag is further revealed by atomically resolved topography and modeled by simulations. We discuss possible advantages tapered InAs nanowires offer for Majorana zero-mode realization and manipulation.

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“…As a result, the third method has shown optimum reproducibility. [19][20][21][22][23] Therefore, the substrate/facet orientation-determined growth direction of NWs is of significance for the realization of rationally designed NW networks with an increased device density and enhanced spatial complexity. It will benefit from a systematic and exhaustive study of the influence of the Si substrate orientations on the III-V NW growth direction, including the technologically relevant on-axis Si (001) substrates.…”

Section: Introductionmentioning

confidence: 99%

Preferred growth direction of III–V nanowires on differently oriented Si substrates

Zeng

Fonseka

et al. 2020

Nanotechnology

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One of the nanowire characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs nanowires. We first studied the selfcatalyzed GaAs nanowire growth on Si (111) and Si (001) substrates. SEM observations show GaAs nanowires on Si (001) are grown along four <111> directions without preference on one or some of them. This non-preferential nanowire growth on Si (001) is morphologically in contrast to the extensively reported vertical <111> preferred GaAs nanowire growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs nanowires along selected <111> directions depending on the Si substrate orientation. To verify the prevalence of the model, nanowires were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of nanowire preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates.

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Au-Assisted Substrate-Faceting for Inclined Nanowire Growth

Cited by 8 publications

References 34 publications

Collector Droplet Behavior during Formation of Nanowire Junctions

Collector Droplet Behavior during Formation of Nanowire Junctions

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires

Preferred growth direction of III–V nanowires on differently oriented Si substrates

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