Au‐Nanodots Embedded Self‐Rectifying Analog Charge Trap Memristor with Modified Bias Voltage Application Method for Stable Multi‐Bit Hardware‐Based Neural Network
Taegyun Park,
Jihun Kim,
Young Jae Kwon
et al.
Abstract:The self‐rectifying memristor with a bilayer of trap‐rich HfO2 and insulating Ta2O5 oxide layers is considered one of the most promising candidates for the memristive crossbar array due to its superior switching performance, scalability with 3D stacking, and low operating power. However, the output current variation due to the electron detrapping from trap states can cause the failure of critical operations in neuromorphic applications. This work suggests two solutions to mitigate the switching variations and … Show more
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