Au/Pt/Ti-Si&lt;inf&gt;3&lt;/inf&gt;N&lt;inf&gt;4&lt;/inf&gt; interfacial defects analysis of a stressed SiGe HBT by using STEM nanometric characterization

Alaeddine, Ali; Genevois, Cécile; Chevalier, Laurence; Daoud, K.

doi:10.1109/ipfa.2012.6306286

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits 2012

DOI: 10.1109/ipfa.2012.6306286

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Au/Pt/Ti-Si<inf>3</inf>N<inf>4</inf> interfacial defects analysis of a stressed SiGe HBT by using STEM nanometric characterization

Ali Alaeddine

Cécile Genevois

Laurence Chevalier

et al.

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Au/Pt/Ti-Si<inf>3</inf>N<inf>4</inf> interfacial defects analysis of a stressed SiGe HBT by using STEM nanometric characterization

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