Auger and radiative recombination coefficients in 0.55-eV InGaAsSb

Kumar, Ritesh; Borrego, J.M.; Dutta, P.S.; Gutmann, R.J.; Wang, C. A.; Nichols, G.

doi:10.1063/1.1828609

Cited by 17 publications

(8 citation statements)

References 29 publications

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“…12,13 In our model the band gap of Ga .85 In . 15 As .13 Sb .87 is narrowed according to the JainRaulston parameters for GaSb 14 and the Auger coefficient is taken to be temperature independent. We perform these simulations using the value for the SRH recombination lifetime s ¼ 95 ns previously used to fit the model to experiment for liquid-phase epitaxy (LPE)-grown LEDs 1 as well as with a value s ¼ 1 ls, which we expect to be achievable with more optimized device growth methods.…”

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confidence: 99%

“…We perform these simulations using the value for the SRH recombination lifetime s ¼ 95 ns previously used to fit the model to experiment for liquid-phase epitaxy (LPE)-grown LEDs 1 as well as with a value s ¼ 1 ls, which we expect to be achievable with more optimized device growth methods. 15 We demonstrate (1) that an optimal (i.e. with the light output power at unity wall plug efficiency L g¼1 maximized) active region dopant density exists for a given operating temperature 0 C < T < 150 C and active region thickness t, (2) that the achievable L g¼1 rises monotonically with operating temperature across the temperature range considered even though g Q at the g ¼ 1 operating point decreases with temperature over a significant portion of the temperature range considered, (3) that with optimal active region dopant density L g¼1 can be increased by 137Â at 20 C and 4.7Â at 150 C, (4) that for a bulk SRH lifetime 10.5Â longer than is used in our experimentally validated model (1 ls as opposed to 95 ns), we expect another improvement in L g¼1 of 3.5Â at 20 C and 2.9Â at 150 C over the existing device studied experimentally, and (5) that for optimized active region thickness the L g¼1 can be further improved by 29% at 25 C. Thus on aggregate, we expect that active region doping and thickness and cleaner device growth could improve L g¼1 by 621Â from 2.7 Â 10 À13 W mm À2 to 1.7 Â 10 À10 W mm À2 at 20 C. Furthermore, we show that optimized devices see more dramatic performance improvements at slightly lower efficiencies as the bias leaves the linear regime (qV % k B T).…”

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confidence: 99%

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Design for enhanced thermo-electric pumping in light emitting diodes

Gray

Santhanam

Ram

2013

Applied Physics Letters

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We present a strategy for optimization of thermo-electric pumping in light emitting diodes (LEDs). We use a finite element model for charge transport in a GaInAsSb/GaSb double hetero-junction LED that is verified experimentally to consider optimal design and operation of low-bias LEDs. The wall-plug efficiency is shown to be enhanced by over 200× at nanowatt power levels and 20× at microwatt power levels. A design for room-temperature operation of a 2.2 μm LED with 100% efficiency is proposed—this represents a 110 °C reduction of the temperature required to observe unity efficiency.

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confidence: 99%

mentioning

confidence: 99%

Design for enhanced thermo-electric pumping in light emitting diodes

Gray

Santhanam

Ram

2013

Applied Physics Letters

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“…The recombination of an electron and a hole take place with the release of energy which is equal to the initial difference in the energies of the two charged particles. The released energy is given out in the form of radiation [52].…”

Section: Radiative Recombination Mechanismmentioning

confidence: 99%

Effect of the Near Surface Depletion Layer on Photo-Response of Direct Band Gap Semiconductor

2019

APTA

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In this study, the effects of the photo-responses of the near surface depletion layer and the deep bulk of gallium antimonide (GaSb) are investigated under different doping levels, injection level and illumination energies. First, the absorption rate of photons is described as a function of illumination energies at different locations inside the sample and as a function of the depth below the illuminated surface for photons with different energies. Then, the doping level dependence of the low injection level radiative, Auger and effective excess carrier lifetimes just under the surface and in the deep bulk are investigated by considering the variation of energy bending at the surface. The variation of the low injection level excess carrier lifetimes with the depth below the illuminated surface for samples with different doping levels is also described. This is followed by the description of the combined effects of doping and illumination energy on the photo-response of the entire bulk at slightly low injection level. Finally, the excess carrier injection level dependence of excess carrier lifetimes under the illuminated surface and deep bulk is also described for samples with different doping levels. Since photon absorption rate is directly related to the free carriers generation rate, the description of the photon absorption rate as functions of illumination energies and the depth below the illuminated surface is found to be the important and factors in the investigation in the photoresponse of semiconductors along with the doping and the injection levels. The analysis of the results also shows that, the under surface region is insensitive to the doping level and that of the deep bulk is highly affected by the doping level. The injection level dependence of the photo-response of the under surface region is similar for all samples with different doping. The energy of illumination each photon mainly suppresses the photo-responses of the points situated closer to the penetration depths of each photon below the illuminated surface of the sample.

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“…1 is considered, in which a semi-infinite bulk emitter and a PV cell with thickness t are separated by a vacuum gap of thickness d. The emitter and the cell are at constant and uniform temperatures of T e = 800 K and T c = 300 K. A temperature of 800 K is chosen for the emitter as it is a representative value for waste heat [31]. The cell consists of gallium antimonide (GaSb) and has a bandgap energy of E g = 0.72 eV (bandgap frequency of ω g = 1.09×10 15 rad/s) at 300 K [39]. GaSb is chosen since it is a well-established cell material that can be fabricated at lower cost than materials with smaller bandgaps as epitaxial processes are not required [40].…”

Section: Description Of the Problemmentioning

confidence: 99%

External Luminescence and Photon Recycling in Near-Field Thermophotovoltaics

2017

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The importance of considering near-field effects on photon recycling and spontaneous emission in a thermophotovoltaic device is investigated. Fluctuational electrodynamics is used to calculate external luminescence from a photovoltaic cell as a function of emitter type, vacuum gap thickness between emitter and cell, and cell thickness. The observed changes in external luminescence suggest strong modifications of photon recycling caused by the presence of the emitter. Photon recycling for propagating modes is affected by reflection at the vacuum-emitter interface and is substantially decreased by the leakage towards the emitter through tunneling of frustrated modes. In addition, spontaneous emission by the cell can be strongly enhanced by the presence of an emitter supporting surface polariton modes. It follows that using a radiative recombination model with a spatially uniform radiative lifetime, even corrected by a photon recycling factor, is inappropriate. Applying the principles of detailed balance, and accounting for non-radiative recombination mechanisms, the impact of external luminescence enhancement in the near field on thermophotovoltaic performance is investigated. It is shown that unlike isolated † Corresponding author. Tel.: + 1 801 581 5721 Email address: mfrancoeur@mech.utah.edu 2 cells, the external luminescence efficiency is not solely dependent on cell quality, but significantly increases as the vacuum gap thickness decreases below 400 nm for the case of an intrinsic silicon emitter. In turn, the open-circuit voltage and power density benefit from this enhanced external luminescence toward the emitter. This benefit is larger as cell quality, characterized by the contribution of non-radiative recombination, decreases.3

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Auger and radiative recombination coefficients in 0.55-eV InGaAsSb

Cited by 17 publications

References 29 publications

Design for enhanced thermo-electric pumping in light emitting diodes

Design for enhanced thermo-electric pumping in light emitting diodes

Effect of the Near Surface Depletion Layer on Photo-Response of Direct Band Gap Semiconductor

External Luminescence and Photon Recycling in Near-Field Thermophotovoltaics

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