Auger Ejection of Electrons from Tungsten by Noble Gas Ions

Hagstrum, H. D.

doi:10.1103/physrev.96.325

Cited by 350 publications

(98 citation statements)

References 8 publications

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“…The distribution is centered at approximately 5 eV for the N = 10 21 cm −3 sample; this value is typically below 5 eV for the metal and often more than 10 eV for the insulator. Figure 5 shows the dependence of γ on the acceleration voltage of the incident ions measured at a collector voltage of 80 V. The γ value for Ne + ions (γ Ne ) accelerated at 600 V was 0.31, which is close to that of W (γ = 0.25, work function 4.5 eV) measured at the same acceleration voltage [55]. On the other hand, the γ Xe value was 0.17-0.22, an order of magnitude larger than the value of 0.02 for W. Whereas the γ Ne values were comparable for electron densities of N = 10 19 and 10 21 cm −3 , γ Xe increased with electron density from 0.17 to 0.22 at an acceleration voltage of 600 V. γ Xe slightly depended on the ion acceleration voltage, particularly for low voltages, showing that γ Xe is mainly dominated by the potential emission rather than the kinetic emission.…”

Section: Measurement Of the Ion-induced Secondary Electron Emission Cmentioning

confidence: 58%

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Watanabe

Ito

et al. 2011

Science and Technology of Advanced Materials

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12CaO·7Al 2 O 3 electride, a sub-nanoporous compound having a work function of 2.4 eV, was examined as a candidate cathode material in fluorescent lamps. The electron emission yield was higher and the discharge voltage was lower for 12CaO·7Al 2 O 3 than for existing cathode materials such as Ni, Mo or W; therefore, the energy consumption of the fluorescent lamps can be improved using 12CaO·7Al 2 O 3 cathodes. Prototype glow-discharge lamps using 12CaO·7Al 2 O 3 were constructed and exhibited reasonable durability.

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Section: Measurement Of the Ion-induced Secondary Electron Emission Cmentioning

confidence: 58%

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Watanabe

Ito

et al. 2011

Science and Technology of Advanced Materials

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“…Although the ion neutralizes before it reaches the surface, we still refer to the particle as an ion for simplicity. 79 Also, Ar does not generally remain in the silicon substrate, as most of the Ar recoils or reflects back into vacuum after impact. 36 All in all, the primary role of the Ar þ is to provide energy to the etch front.…”

Section: Argon Ion Bombardmentmentioning

confidence: 99%

Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

484

372

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Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

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“…PE is characterized by an Auger-type process in which at least two conduction band electrons are involved, one neutralizing the arriving ion into the ground state, and the other being excited into the continuum above the filled band. 9 The yield by PE is generally small, about 0.1, and therefore can be neglected. KE is a process where the ion transfers kinetic energy to electrons in the metal to eject them above the surface barrier into the vacuum.…”

mentioning

confidence: 99%

Observation of self-sputtering in energetic condensation of metal ions

Anders

2004

Applied Physics Letters

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The condensation of energetic metal ions on a surface may cause self-sputtering even in the absence of substrate bias. Charge-stateaveraged self-sputtering yields were determined for both zirconium and gold ions generated by a cathodic vacuum arc. Films were deposited on differently biased substrates exposed to streaming Zr and Au vacuum arc plasma. The self-sputtering yields for both metals were estimated to be about 0.05 in the absence of bias, and exceeding 0.5 when bias reached -50 V. These surprisingly high values can be reconciled with binary collision theory and molecular dynamics calculations taking high the kinetic and potential energy of vacuum arc ions into account.APL, MS# L04-4375, Revised version, Oct. 16, 2004.

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Auger Ejection of Electrons from Tungsten by Noble Gas Ions

Cited by 350 publications

References 8 publications

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Overview of atomic layer etching in the semiconductor industry

Observation of self-sputtering in energetic condensation of metal ions

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Auger Ejection of Electrons from Tungsten by Noble Gas Ions

Cited by 350 publications

References 8 publications

Secondary electron emission and glow discharge properties of 12CaO·7Al2O3electride for fluorescent lamp applications

Secondary electron emission and glow discharge properties of 12CaO·7Al2O3electride for fluorescent lamp applications

Overview of atomic layer etching in the semiconductor industry

Observation of self-sputtering in energetic condensation of metal ions

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Product

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Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications