Auger electron spectroscopy investigations of the effect of degradation of depth resolution and its influence on the interdiffusion data in thin film Au/Ag, Cu/Ag, Pd/Au and Pd/Cu multilayer structures

Bukaluk, A.

doi:10.1016/s0169-4332(01)00070-8

Cited by 28 publications

(20 citation statements)

References 16 publications

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“…For example, the value of D for the interdiffusion of atomic Au through a layer of Ag would increase from 10 −24 m 2 s −1 to 10 −19 m 2 s −1 as the temperature increases from room temperature to 100 °C. [ 79,80 ] Collectively, the degree of alloying increases with elevation of reaction temperature, thickening of A layer deposited on the template of metal B , and depression of the energy barrier to diffusion. In general, alloying is the basis for retaining the morphology of the original template during a galvanic replacement reaction ( Figure 3 A).…”

Section: Alloyingmentioning

confidence: 99%

25th Anniversary Article: Galvanic Replacement: A Simple and Versatile Route to Hollow Nanostructures with Tunable and Well‐Controlled Properties

et al. 2013

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This article provides a progress report on the use of galvanic replacement for generating complex hollow nanostructures with tunable and well-controlled properties. We begin with a brief account of the mechanistic understanding of galvanic replacement, specifically focused on its ability to engineer the properties of metal nanostructures in terms of size, composition, structure, shape, and morphology. We then discuss a number of important concepts involved in galvanic replacement, including the facet selectivity involved in the dissolution and deposition of metals, the impacts of alloying and dealloying on the structure and morphology of the final products, and methods for promoting or preventing a galvanic replacement reaction. We also illustrate how the capability of galvanic replacement can be enhanced to fabricate nanomaterials with complex structures and/or compositions by coupling with other processes such as co-reduction and the Kirkendall effect. Finally, we highlight the use of such novel metal nanostructures fabricated via galvanic replacement for applications ranging from catalysis to plasmonics and biomedical research, and conclude with remarks on prospective future directions.

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Section: Alloyingmentioning

confidence: 99%

25th Anniversary Article: Galvanic Replacement: A Simple and Versatile Route to Hollow Nanostructures with Tunable and Well‐Controlled Properties

et al. 2013

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“…The real etching rates of Ar + for diamond film, TiC layer and Cu film are reported to be 9 nm/min (deduced from Fig. 6(a) in reference [25]), 5.82 nm/min [26] and 0.12 nm/min [27], respectively. The etching rates are much lower than 24 and 76 nm/min for the SiO 2 film.…”

Section: Resultsmentioning

confidence: 95%

Interface characterization of a Cu–Ti-coated diamond system

Lin

Wang

Zhang

et al. 2015

Surface and Coatings Technology

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“…No diffusion was detected within the distance constrained by EDX spatial resolution of a few microns. On the other hand, it was reported that thermally induced diffusion in Ag-Cu system occurs at temperature as low as 150ºC [8][9][10]. In their studies, Cu layer with thickness ranging from 50nm to 200nm and Ag layer with thickness varying from 20nm to 80nm are thermally deposited on Cu substrates sequentially.…”

Section: Resultsmentioning

confidence: 99%

“…The EDX result of Au-Ag is similar to that of Ag-Cu inter-diffusion. Based on the result report by others [10], the reported activation energy and the pre-exponential diffusivity vary when different approaches are used. In short range inter-diffusion regions, the activation energy vary from 1.19ev to 1.58ev, and the preexponential diffusivity range from 7.2 x 10 -5 cm 2 sec -1 to 0.61cm 2 sec -1 .…”

Section: Resultsmentioning

confidence: 99%

Solid-state bonding of silicon chips to silver layer plated on copper substrate

Sha

Lee

2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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In this project, a novel solid-state bonding technique was developed to bond silicon (Si) chips to silver (Ag) layer plated on copper (Cu) substrates at temperature (260ºC) far below Ag melting temperature of 961 o C. This is possible because the gold (Au) layer coated on Si chip is made to contact the Ag atoms in atomic scale, thus allowing the Au atoms and Ag atoms to see each other and share electrons. This is our fundamental belief behind this technology. Ag is ductile and has low yield strength. It can deform to accommodate shear strain caused by large mismatch in coefficient of thermal expansion (CTE) between Si (2.7x10 -6 / o C) and Cu (17x10 -6 / o C). Ag has the highest electrical and thermal conductivities among all metals. It is the dream bonding medium. The question is how to bond Ag to other materials at temperature compatible to electronic packaging processes used in industries. In experiments, Si chips were coated with thin chromium (Cr) and Au layers and bonded to Ag layer plated on Cu substrates. The bonding was performed at 260 o C with 1000psi static pressure in 90 mtorr vacuum environment to suppress oxidation. There is no molten phase involved during the bonding process. The resulting Ag joints are nearly perfect. The joints are strong and no voids are observed on Ag/Cu and Si/Ag bonding interfaces. This new solid-state bonding technology should be valuable in improving the thermal performance and reliability of high power devices.

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Auger electron spectroscopy investigations of the effect of degradation of depth resolution and its influence on the interdiffusion data in thin film Au/Ag, Cu/Ag, Pd/Au and Pd/Cu multilayer structures

Cited by 28 publications

References 16 publications

25th Anniversary Article: Galvanic Replacement: A Simple and Versatile Route to Hollow Nanostructures with Tunable and Well‐Controlled Properties

25th Anniversary Article: Galvanic Replacement: A Simple and Versatile Route to Hollow Nanostructures with Tunable and Well‐Controlled Properties

Interface characterization of a Cu–Ti-coated diamond system

Solid-state bonding of silicon chips to silver layer plated on copper substrate

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