Auger electron spectroscopy studies of In4Se3 layered crystals

Galiy, P.V.; Nenchuk, T. M.; Stakhira, J. M.; Fiyala, Ya.

doi:10.1016/s0368-2048(99)00016-x

Cited by 10 publications

(5 citation statements)

References 10 publications

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“…However, the concentration of oxygen is much lower than that of carbon. The results of XPS analysis of the initial (0001) surfaces of antimony telluride actually also confirm the data of our previous studies that the surfaces of layered chalcogenide semiconductors obtained ex situ tend to be predominantly carbon contaminated [20].…”

Section: Elemental and Structural Studies Of Sb2te3 (0001) Surface As...supporting

confidence: 88%

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2022

ELIT

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The cleavage surface of Sb2Te3 layered chalcogenide crystal like as other 2D layered ones, such as InSe, In4Se3, InTe, is provided as a nanoscale embossed template for the formation of arrays of self-assembled In nanostructures due to thermal deposition and subsequent solid state dewetting (SSD) procedure. Sb2Te3 samples were characterised by X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunneling microscopy/spectroscopy (STM/STS). Sb2Te3 has got the anisotropic crystal structure with the presence of van der Waals interlayer interactions. The studied (0001) surfaces were stable with a specific surface relief, which, as in the cases of other layered crystals In4Se3, InSe, InTe, is due to the crystal structure of the layer package. The shape of single In induced nanostructure and their array's symmetry are directed by the (0001) surface lattice symmetry. We observed the formation of triangular shaped In nanostructures ordered in hexagonal structured arrays with the well-defined lattice parameter after the SSD. That is, it can be argued that the cleavage (0001) surface of the Sb2Te3 crystal actually works as a spatially distributed ordered set of cells, which act as a guiding factor for the self-organization of nanostructures due to SSD process on the macroscale. The comparative fractal analysis of STM images of the (0001) Sb2Te3 and (0001) InSe surfaces, shows that distribution in size of In nanostructures are almost the same under commensurate experimental conditions. Sb2Te3 energy gap determined from STS spectra of initial surfaces is approaching value of 0.2 eV. An increase in the degree of In coverage is expressed in DOS distribution with appearance of its sufficient value in the range of Sb2Te3 energy gap.

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Section: Elemental and Structural Studies Of Sb2te3 (0001) Surface As...supporting

confidence: 88%

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2022

ELIT

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“…The position of the change in the slope on the I C /I Se = f (t) curve on the 'saturation' at t 1 h confirms the formation of the first carbon 'quasi atomic layer' and coverage of all Se sites. The change in the slope of the I C /I I n = f (t) curve, after its peculiarities in the t = 4.5-5.5 h range, and its 'saturation' at t 7 h shows the formation of a completely adsorbed carbon monolayer with In atoms covering and the transition of the carbon film at ∼ = 1 coverage into a graphite phase [13,16].…”

Section: Adsorption Activities and Kineticsmentioning

confidence: 99%

“…In addition of localized states (LS) of the impurity and Mott-type quasi-localized states (QLS) near the Fermi level exist. These QLS appear as a result of the influence of the oscillation of the layer on the electronic subsystem of the crystal [16]. The Mott QLS concentration is N t ≈ N F E (N t ≈ (4-8) × 10 17 cm −3 [19]), where E ≈ 0.15-0.20 eV is the width of the QLS band near the Fermi level and N F ≈ (3-5) × 10 18 eV −1 cm −3 is the density of states.…”

Section: Adsorption Modelmentioning

confidence: 99%

“…The thin layer of metallic Ga, thus exposed, is easily oxidized in an oxygen atmosphere at room temperature [12]. The surfaces in In 4 Se 3 (both pure and silver intercalated) layered crystals were studied by AES in [13,14]. It was established that the (100) surfaces of the cleaved In 4 Se 3 layered crystals are most adsorption active relative to carbon monoxide.…”

Section: Introductionmentioning

confidence: 99%

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Study of interface formation on the cleavage surfaces ofA³{B}⁶layered semiconductors

Galiy¹,

Nenchuk²,

Stakhira³

2000

J. Phys. D: Appl. Phys.

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The adsorption activity of In4Se3, In4Se3(Ag), InSe, GaSe and TlGaSe2 semiconductor crystal interlayer cleavage surfaces relatively to N2, O2, CO gases and water vapour has been studied by Auger electron spectroscopy and mass spectrometry. It has been determined that atomically clean layered crystal surfaces do not adsorb N2 and water vapour but reveal a low activity with respect to O2. The kinetics of CO adsorption on surfaces obtained by cleavage in an UHV have been investigated. Indium and gallium selenides adsorb CO with the tendency increasing in the sequence GaSe→TlGaSe2→ InSe→In4Se3 crystals; In4Se3 is essentially more active than the others. The adsorption model with dissociations of the CO molecule and carbon adsorption resulting from the layered structure and peculiarities in the electron-energy spectra of the crystals and their surfaces is discussed with the In4Se3 crystal serving as example.

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“…6 In addition, In 4 Se 3 polycrystalline thin films have been synthesized and suggested for photovoltaic applications. 7,8 Also, other experimental ͓e.g., Auger spectroscopy, 9 and single crystal surface characterization with STM, LEED, and XPS ͑Ref. 3͔͒ and theoretical ͑e.g., lattice dynamics modelization, 10 pseudopotential band structure calculations 11 ͒ studies have been reported.…”

Section: Introductionmentioning

confidence: 99%

Ab initiocalculations and ellipsometry measurements of the optical properties of the layered semiconductorIn4Se3

et al. 2010

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Schubert, Eva; Schubert, M.; Losovyj, Yaroslav B.; Galiy, P.; and Dowben, Peter A., "Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In 4 Se 3 " (2010 In this work, we present a thorough study of the optical properties of the layered orthorhombic compound In 4 Se 3 . The dielectric function-real and imaginary parts, the complex refraction index, the reflectivity, the absorption coefficient, and the conductivity of In 4 Se 3 were calculated with the inclusion of the spin-orbit interaction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employed for more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and c axes of orthorhombic absorbing In 4 Se 3 single crystals cut approximately parallel to ͑100͒ at photon energies from 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss the location and nature of the main optical peaks appearing in the spectra. The obtained optical functions display a rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a high extension, given the scarce experimental information about its optical properties.

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Auger electron spectroscopy studies of In4Se3 layered crystals

Cited by 10 publications

References 10 publications

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

Study of interface formation on the cleavage surfaces ofA³{B}⁶layered semiconductors

Ab initiocalculations and ellipsometry measurements of the optical properties of the layered semiconductorIn4Se3

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Auger electron spectroscopy studies of In4Se3 layered crystals

Cited by 10 publications

References 10 publications

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

TEMPLATE DIRECTED FORMATION OF METALLIC IN/(0001) SURFACE OF Sb2Te3 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

Study of interface formation on the cleavage surfaces ofA3{B}6layered semiconductors

Ab initiocalculations and ellipsometry measurements of the optical properties of the layered semiconductorIn4Se3

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Study of interface formation on the cleavage surfaces ofA³{B}⁶layered semiconductors