Auger Electron Spectroscopy Study of GaAs Substrate Cleaning Procedures

Zilko, J. L.; Williams, R. Stanley

doi:10.1149/1.2123868

Cited by 15 publications

(5 citation statements)

References 8 publications

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“…The XRD results showed that the oxide layer contains elemental Ga. The formation of Ga can perhaps be expected because the oxide Ga~O is unstable and therefore tends to disproportionate to a mixture of Ga and Ga203 (17) according to the overall chemical reaction [7] 3Ga~O --> 4Ga + Ga203 AG~98 K = --11.6 kcal [7] This implies that the Ga203 oxide growth process involves the formation of the intermediate, Ga20.…”

Section: -Spacing (~)mentioning

confidence: 99%

“…Several perovskite-type materials have been tested as cathodes, in order to reduce the ohmic and/or nonohmic polarization losses (7,8). The important role the morphology of the electrode layer, i.e., the porosity and the pore size distribution, plays both on the ohmic and on the nonohmic polarization losses, is however not considered in depth in the literature.…”

Section: Introductionmentioning

confidence: 99%

“…X-ray photoelectron spectroscopy (XPS) is a highly sensitive method of detecting the chemical states of the atoms on surfaces. It has conventionally been used to identify the chemical composition of the surface species (2)(3)(4)(5)(6)(7)(8)(9).…”

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confidence: 99%

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The Electrochemical Nature of GaAs in Acids: A Comparison with InP

Hsieh

Shih

1991

J. Electrochem. Soc.

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The chemical composition of surface oxides grown on GaAs was investigated using x-ray diffraqtion techniques. Native oxides were prepared by exposing the GaAs to HCI and HNO3 etchants at concentrations ranging from pH 5 to the maximum acidities available. A mixture of crystalline stoiehiometric phases were formed. The chemical oxides appear to be more complex than indicated by previous studies by x-ray photoelectron spectroscopy, but were independent of the type of etchant or its acidity. Only constituent oxides, rather than mixed oxides, were found on the oxidized GaAs surface. The thermodynamics may play a key role in the reaction pathway. In the HCI etch, Ga ~ and GaLGa m ehloro compounds are not formed, and the dissolution of GaAs is severely inhibited even in the most acidic solutions under illumination. This complete absence of nucleophilic attack of the Ga--As bond by a CI-ion is reasonably well explained by the fact that the intermediate, GaCI, is not thermodynamically stable.

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Section: -Spacing (~)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Electrochemical Nature of GaAs in Acids: A Comparison with InP

Hsieh

Shih

1991

J. Electrochem. Soc.

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“…Hofmann and Erlewein 1978, Biberian and Somorjai 1979a, b, Kelemen and Wachs 1930 The most striking feature of AES is its performance in the scanning Auger microprobe (SAM) (MacDonald 1970, MacDonald and Waldrop 1971, Venables et a1 1976. In the characterisation of semiconductor devices and materials, SAM can be advantageously used to perform the localised analysis and mapping of major and minor constituents and contaminants with high lateral resolution (Zilko and Williams 1982). Metallurgical specimens are another important field of application of SAM (Allen and Wild 1981, Dudek et a1 1981, Janssen 1981, Matienzo and Holub 1981, Nikolopoulus et a1 1981, Stupian and Fleischauer 1981, MacDougall et a1 1982.…”

Section: Characteristic Features Of Aesmentioning

confidence: 99%

A comparative study of methods for thin-film and surface analysis

1984

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A number of features characteristic of different thin-film analytical methods are reviewed and evaluated.The principles, approaches for quantification and prominent problems of the most commonly used methods (ESCA, AES, SIMS, LEIS, RBS and NRA) are discussed.Evaluation of the special advantages and disadvantages of the different methods points out the need for a synergetic multi-method approach in thin-film analysis.

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“…AES has also been used to investigate the residues left on GaAs(lOO) surfaces following various cleaning procedures (1026). Evidence has been obtained that EELS spectra from MBE grown GaAs(OOl) vary with temperature, probably because the surface arsenic concentration varies with temperature (26).…”

Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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He Joined the company in 1959 as a radiochemist. His current work is directed toward developing advanced techniques for semiconductor materials characterization using electron beam (scanning Auger) and in microprobe techniques for chemical imperfections. X-ray topography, and scanning transmission electron microscopy techniques for physical imperfections. Larrabee earned a B.Sc. from the University ol Bishop's College In Quebec and an M.Sc. in chemistry from McMaster University in Ontario, Canada. He has published in analytical, electrochemical, and instrumentation journals and contributed chaplers In books. He has coauthored a book on the characterization of semiconductor materials and coedited a book on the characterization of solid surfaces. Larrabee is a member of the ACS, Electrochemical Society, SAS, and the Dallas Society of Analytical Chemists. R. Allen Bowling received his B.S. In Chemistry from the University ol Alabama and a Ph.D. In Chemistry from ihe University of Tennessee.He held an Alexander von Humboldt postdoctoral research position at the Institute ol Inorganic Chemistry, University of Frankfurt, West Germany, from March 1979 to July 1980. He joined Texas Instruments Incorporated in September 1980 as a process control engineer in a semiconductor processing area. In January 1982, he became a member of the technical staff in the Materials Characterization Branch of the Materials Science Laboratory of Texas Instruments, where he is presently responsible for Auger and XPS instrumentation. Bowling is a member of the Electrochemical Society and the American Vacuum Society.

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Auger Electron Spectroscopy Study of GaAs Substrate Cleaning Procedures

Cited by 15 publications

References 8 publications

The Electrochemical Nature of GaAs in Acids: A Comparison with InP

The Electrochemical Nature of GaAs in Acids: A Comparison with InP

A comparative study of methods for thin-film and surface analysis

Forensic science

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