Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

Zhu, Liang; Song, Yuxin; Qi, Zhen; Wang, Shumin; Zhu, Liangqing; Chen, Xiren; Zha, F. X.; Guo, Shaohui; Shao, Jianda

doi:10.1016/j.jlumin.2015.08.075

Cited by 4 publications

(1 citation statement)

References 49 publications

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“…Auger process involve three carriers, and the rate of Auger recombination is lower than multiphonon emission at higher temperature. However, Auger processes will compete more effectively with multiphonon processes at low temperatures, as the multiphonon contribution becomes small at low temperatures [41,42]. So the Auger recombination is the main reason for the non-radiative recombination at low temperature.…”

Section: Resultsmentioning

confidence: 99%

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Liu

Wang

Zhu

et al. 2018

Semicond. Sci. Technol.

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This paper reports the dislocation-related photoluminescence (PL) in GeSn films. The GeSn film samples with Sn content of 1%-7.4% were grown on Ge (001) substrates by molecular beam epitaxy at low temperatures. Dislocations at the interface between the GeSn and the Ge buffer layer as well as the threading dislocations throughout the GeSn layer were observed for the annealed samples, but not for the as-grown samples. PL peaks of the annealed GeSn film samples show a significant red shift with increasing Sn content. However, a large energy difference (122 meV) between the PL peak energy and theoretically calculated indirect bandgap energy was found for all the GeSn films with different Sn contents. Furthermore, the PL peak position as a function of temperature could be well fitted by the calculated E g -T line, indicating that the PL observed in the GeSn films is dislocation-related PL.

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Section: Resultsmentioning

confidence: 99%

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Liu

Wang

Zhu

et al. 2018

Semicond. Sci. Technol.

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Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Shi,

Wang,

et al. 2024

Applied Physics Letters

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High-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials and devices. As an important component of type II superlattices, InAs/InxGa1−xAsySb1−y would play an important role in the field of high-performance infrared detectors due to their excellent luminescence efficiency and high crystal quality. However, their interfacial characteristics and the associated minority carrier lifetime are still difficult to identify. In this paper, an atomic imaging technique was used to identify the arrangement and distribution of elements of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice. Our results confirm the epitaxy mechanism that the quaternary alloy consists of two kinds of ternary alloy in one monolayer. Moreover, by separating the cation and anion columns in the elementally resolved atomic images of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice, we demonstrate that the interfacial atomic intermixing is less than one molecular layer thickness. Therefore, benefiting from excellent interface quality, InAs/In0.5Ga0.5As0.5Sb0.5 superlattice exhibited high radiation recombination efficiency in the long-wave infrared band (∼8.5 μm), and longer minority carrier lifetime (∼810 ns at 90 K).

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Infrared-modulated photoluminescence spectroscopy: from wide-band coverage to micro-area and high-throughput scanning imaging

Shao Jun,

Chen Xi-Ren,

Wang Man

et al. 2024

Acta Phys. Sin.

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Photoluminescence (PL) spectroscopy has been widely used in the ultraviolet-near-infrared spectral range for over seventy years since the very early report in 1950’s, because it not only reveals the electronic structure information of, e.g., band gap and impurity energy levels of semiconductor materials, but also serves as an efficient tool for analyzing interfacial structures, carrier lifetime, and quantum efficiency. In the infrared band beyond about 4 μm, however, the study of PL spectroscopy had been limited for decades long due to strong thermal background interference, weak PL signal and low detection ability. In this review, a conventional PL method is introduced based on a Fourier transform infrared (FTIR) spectrometer, and a continuous-scan FTIR spectrometer-based double-modulation PL (csFTIR-DMPL) method is briefly described that was proposed in 1989 for breaking through the dilemma of the infrared band, and developed continuously in the later more than 20 years, with its limitations emphasized. Then, a step-scan FTIR spectrometer-based infrared modulated PL (ssFTIR-MPL) method reported in 2006 is analyzed with highlights on its advantages of anti-interference, sensitivity and signal-to-noise ratio, followed by enumerating its effectiveness demonstration and application progress in many research groups worldwide. Further developments in recent years are then summarized of wide-band, high-throughput scanning imaging and spatial micro-resolution infrared modulated PL spectroscopic experimental systems, and the technological progresses are demonstrated of infrared-modulated PL spectroscopy from 0.56-20 μm visible-far-infrared broadband coverage to > 1k high-throughput spectra imaging and ≤2-3 μm spatial micro-resolution. Typical achievements of collaborative research are enumerated in the visible-far-infrared semiconductor materials of dilute nitrogen/dilute bismuth quantum wells, HgCdTe epitaxial films, and InAs/GaSb superlattices. The results presented demonstrate the advancement of infrared modulated PL spectroscopy and the effectiveness of the experimental systems, and foresee further application and development in the future.

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Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

Cited by 4 publications

References 49 publications

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Infrared-modulated photoluminescence spectroscopy: from wide-band coverage to micro-area and high-throughput scanning imaging

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