Auger recombination in In(Ga)Sb/InAs quantum dots

Zabel, T.; Hedlund, Carl Reuterskiöld; Gustafsson, Oscar; Karim, Amir; Berggren, Jesper; Wang, Q.; Ernerheim-Jokumsen, Christopher; Soldemo, Markus; Weissenrieder, Jonas; Götelid, Mats; Hammar, Mattias

doi:10.1063/1.4905455

Cited by 10 publications

(5 citation statements)

References 27 publications

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“…Although the demonstrations of In(Ga)Sb QD growth on InAs utilize a variety of epitaxial techniques, all suggest that the formation of these QDs is extremely sensitive to growth parameters, with subsequent growth studies suggesting that the window for InSb QD formation is rather narrow, but that the addition of Ga appears to result in the clear formation of InGaSb QDs with emission wavelengths in the 5-6 μm range, demonstrating strong confinement of holes in the InGaSb QD valence band [248,252]. Perhaps most intriguingly for the future development of QD-based mid-IR emitters is a recent work that suggests significant improvement in nonradiative recombination lifetimes-both Auger [260] and defect-related [248]-for such active regions (figure 21). As a result, type-II InGaSb QD-based emitters have demonstrated significant improvements in hightemperature emission quenching (a decrease in emission intensity by a factor of only 4-5 from 77 K to 250 K) [248].…”

Section: Type-ii Quantum Dot Emittersmentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

145

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The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

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Section: Type-ii Quantum Dot Emittersmentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

145

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“…[24] Additionally during the recombination, the non-radiative processes such as the trap-mediated Shockley-Read-Hall (SRH) recombination and Auger recombination in colloidal quantum dots could also play an important role. [28][29][30] Auger process is known that the energy of the electron and hole recombination is transferred to a third carrier, and the carrier either an electron or a hole is reexcitated to higher energy state, resulting in no light emission. [31] In this Letter, we study the steady-state PL of the Cu-deficient CIS/ZnS core/shell 2 NCs with the [Cu]/[In] ratio of 0.25 with changing the excitation power and the sample temperature.…”

mentioning

confidence: 99%

Recombination processes in CuInS2/ZnS nanocrystals during steady-state photoluminescence

Sun

Qian

Peng

et al. 2016

Applied Physics Letters

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We report on temperature-and excitation-power-dependent photoluminescence (PL) study of CuInS 2 /ZnS nanocrystals dispersed on a SiO 2 /Si substrate with a confocal micro-PL system. With increasing the excitation power at 22 K and room temperature, the PL spectra are blue-shifted because of the state filling. At low temperature, a small peak is observed at the low energy side of the spectrum, which could be due to the Förster resonance energy transfer between different nanocrystals. The integrated PL intensity increases sublinearly as a function of excitation power with a power factor of around 2/3, which demonstrates the Auger recombination dominated process in the nanocrystals, especially under the high excitation power.

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“…There have been many reports investigating the relaxation rate properties of various advanced materials such as HgCdTe [71,72], PbSe [73,74], InSbN and hetero-structures of InAs/GaSb [75] in pump-probe experiments. The phonon dynamics and electron-phonon interactions are studied by monitoring the absorption and decay processes [76].…”

Section: Fundamental Studies and Condensed Matter Applicationsmentioning

confidence: 99%

Multi-Pass Free Electron Laser Assisted Spectral and Imaging Applications in the Terahertz/Far-IR Range Using the Future Superconducting Electron Source BriXSinO

et al. 2022

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Free-Electron Lasers are a rapidly growing field for advanced science and applications, and worldwide facilities for intense field generation, characterization and usage are becoming increasingly popular due to their peculiarities, including extremely bright, coherent, wide band tunable ultra-short pulses which are not achievable with other techniques up to now. In this review we give a thorough survey of the latest advances in the Free-Electron Laser-based field generation and detection methodologies and then present the main characteristics of a future THz/IR source, named TerRa@BriXSinO, based on a superconducting linear accelerator. The foreseen source is strongly monochromatic, with a bandwidth of 1% or smaller, highly coherent both transversally and longitudinally, with extreme versatility and high frequency tunability. After introducing the most recent and novel FEL-assisted scientific investigations, including fundamental explorations into complex systems and time-dependent interactions and material dynamics, we present our vision on the potential use of the TerRa facility and analyze some possible applications, ranging from non-linear physics under extreme conditions to polarization sensitive imaging and metamaterial-based sensing.

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Auger recombination in In(Ga)Sb/InAs quantum dots

Cited by 10 publications

References 27 publications

Next-generation mid-infrared sources

Next-generation mid-infrared sources

Recombination processes in CuInS2/ZnS nanocrystals during steady-state photoluminescence

Multi-Pass Free Electron Laser Assisted Spectral and Imaging Applications in the Terahertz/Far-IR Range Using the Future Superconducting Electron Source BriXSinO

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