Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

Olson, B. V.; Grein, C. H.; Kim, J. K.; Kadlec, Emil; Klem, John F.; Hawkins, Samuel D.; Shaner, Eric A.

doi:10.1063/1.4939147

Cited by 33 publications

(16 citation statements)

References 26 publications

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“…Improvements in T2SL detector performance depend critically on the minority-carrier (MC) lifetime, which currently is controlled by flaw-related Shockley-Read-Hall (SRH) recombination [5,6,[8][9][10]13] at typical operating temperatures. Previously, InAs=InðAs; SbÞ T2SLs have been shown to have MC lifetimes of approximately 10 μs in the midwave infrared (MWIR) [6,13] and hundreds of nanoseconds in the long-wave infrared (LWIR) [14,15], with Auger coefficients reported between 1 and 5 × 10 −26 cm 6 =s for MWIR [6,10] and low 10 −25 cm 6 =s for LWIR [15]. These results indicate that InAs=InðAs; SbÞ T2SLs are prime candidates for next-generation IR detectors.…”

Section: Introductionmentioning

confidence: 92%

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

et al. 2016

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A set of seven InAs=InðAs; SbÞ type-II superlattices (T2SLs) are designed to have specific band-gap energies between 290 meV (4.3 μm) and 135 meV (9.2 μm) in order to study the effects of the T2SL bandgap energy on the minority-carrier lifetime. A temperature-dependent optical pump-probe technique is used to measure the carrier lifetimes, and the effect of a midgap defect level on the carrier-recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately −250 AE 12 meV relative to the valence-band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence-band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs=InðAs; SbÞ T2SLs is singular and is nearly independent of the exact position of the T2SL band-gap or band-edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the band gap, a result that should significantly increase the minority-carrier lifetime.

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Section: Introductionmentioning

confidence: 92%

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

et al. 2016

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“…One challenge is that photodetectors used in space-based instrumentation are required to be radiation hard, meaning that they need to exhibit only a minor performance degradation after exposure to radiation. In the last decade, SL detectors based on InAs/GaSb material layers have demonstrated significant performance improvements over HgCdTe due to their low interband tunneling and suppressed Auger recombination rates [5,81,82,102,115]. A set of LWIR InAs/GaSb T2SLs based on a Np complementary barrier IR detector (CBIRD) device design was previously studied to understand the effect of proton irradiation on the device performance [116,117] After irradiation, the MC lifetime was observed to decrease at low temperatures due a higher rate of SRH events.…”

Section: Discussionmentioning

confidence: 99%

“…Auger optimization is not present, then the Auger rate is a function principally of the bandgap energies and the effective masses of the electrons and holes [67]. In general, C is equal to the sum of the electron dominated Auger coefficient (C n ) and the hole-dominated Auger coefficient (C p ) as C = C n + C p [82,83]. The electron-dominated…”

Section: Auger Recombinationmentioning

confidence: 99%

“…where N s is a measure of the carrier density for the onset of saturated behavior in Auger neglected during this analysis, and the total Auger recombination is assumed to be entirely due to the electron dominated Auger-1 process [82]. The Auger-1 coefficient, C n , for n-type material is defined as [65,67],…”

Section: Augermentioning

confidence: 99%

“…The ability to suppress the inter-sub-band transitions in a T2SL allows the reduction of Auger recombination rates by limiting the possible final, higher energy states of the electrons and holes. However, suppression of Auger resonances remain a challenge due to the complicated nature of the recombination process and the dependence on states in the secondary zones of the electronic band structure.If final-state Auger optimization is not present, then the Auger recombination is a function of the bandgap energies and the effective masses of the electrons and holes[4,36,45,65,67,81,82].…”

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confidence: 99%

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Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Aytac¹

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All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as next generation materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential-transmission measurements are used here to demonstrate that "Ga-free" InAs/InAs 1−x Sb x T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements of unintentionally doped MWIR and LWIR InAs/InAs 1−x Sb x T2SLs demonstrate minority carrier (MC) lifetimes of 18.4 µs and 4.5 µs at 77 K, respectively. This represents a more than two order of magnitude increase compared to the 90 ns MC lifetime measured in a comparable MWIR and LWIR InAs/GaSb T2SL. Through temperaturedependent differential-transmission measurements, the various carrier recombination processes are differentiated and the dominant recombination mechanisms identified for InAs/InAs 1−x Sb x T2SLs. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs and potentially bulk Hg 1−x Cd x Te photodetectors. In addition to carrier lifetimes, the drift and diffusion of excited charge carriers through the superlattice layers (i.e. in-plane transport) directly affects the performance of photo-detectors and emitters. All-optical ultrafast techniques were successfully used for a direct measure of in-plane diffusion coefficients in MWIR InAs/InAsSb T2SLs using a photo-generated transient grating technique at various temperatures. Ambipolar diffusion coefficients of approximately 60 cm 2 /s were reported for MWIR InAs/InAs 1−x Sb x T2SLs at 293 K.

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Optoelectronic Material Characterization Platform using RF Topological Edge States

Dev,

Anthony,

Trendafilov

et al. 2024

Laser & Photonics Reviews

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Efficient characterization of optoelectronic material properties represents a crucial step in the development of next‐generation infrared (IR) materials and devices. For the first time, a sensitive, contact‐free optoelectronic material characterization platform is demonstrated that exploits the unique properties of radio frequency (RF) topological edge states implemented in a topological microstrip waveguide. The topological device is compatible with standard printed circuit board (PCB) processes with no additional materials, stubs, or resonators. The waveguide and topological properties computationally are designed and then experimentally the results are validated with S‐parameter and near‐field measurements. Finally, as a proof of principle, the room temperature spectral response of a micron‐scale thick mid‐wave infrared (MWIR) mercury cadmium telluride (Hg0.70Cd0.30Te) is measured using the topological microstrip and a five‐fold and 20‐fold increase is demonstrated in response when compared to a plain microstrip and trivial bandgap device, respectively. These results open the door to straightforward, low‐cost characterization of optoelectronic films.

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Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

Cited by 33 publications

References 26 publications

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Optoelectronic Material Characterization Platform using RF Topological Edge States

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