Thanks to its ultrahigh carrier mobility (∼10 4 −10 5 cm 2 V −1 s −1 ), graphene shows tremendous application potential in nanoelectronics, but it cannot be applied in effective field-effect transistors (FETs) because of its intrinsic gapless band structure. Thus, introducing a bandgap for graphene is a prerequisite to realize an FET for logic applications. Herein, through firstprinciples GW calculations, we have predicted a series of novel Dion− Jacobson (DJ) phase halide perovskite semiconductors CsSb(Br 1−x I x ) 4 (x = 0, 0.5, 1) with the quasi-linear (graphene-like) band edge dispersion; as the best one of which, CsSbBr 2 I 2 exhibits a direct bandgap (0.52 eV) as well as a quasilinear electronic dispersion, yielding an ultrasmall carrier effective mass (0.03 m 0 ) and a high estimated carrier mobility (5 × 10 3 cm 2 V −1 s −1 ). This gives a significant reference to the exploration of semiconductors with excellent transport properties. Moreover, our calculations also implicate that the DJ perovskites CsSb(Br 1−x I x ) 4 (x = 0, 0.25, 0.5, 0.75, 1) show soft and anisotropic mechanical characteristics as well as excellent electronic, transport, and optical properties, which demonstrate their multifunctional application in infrared optoelectronic, high-speed electronics, and photovoltaics.