2022
DOI: 10.1038/s41524-022-00942-0
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Author Correction: A computational framework for guiding the MOCVD-growth of wafer-scale 2D materials

Abstract: In this article the author name Nuruzzaman Sakib was incorrectly written as Nurruzaman Sakib. The original article has been corrected.

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“…With bottom-up techniques, atomic or molecular precursors react to form individual crystal grains and then coalesce into a single layered thin film. Chemical vapor deposition (CVD) , is one of the most used bottom-up growth techniques to produce a thin layer of 2D MoS 2 . This technique makes use of a substrate whose surface chemistry and orientation play a crucial role in the segregation and chemical interaction of precursors to form 2D MoS 2 .…”
Section: Introductionmentioning
confidence: 99%
“…With bottom-up techniques, atomic or molecular precursors react to form individual crystal grains and then coalesce into a single layered thin film. Chemical vapor deposition (CVD) , is one of the most used bottom-up growth techniques to produce a thin layer of 2D MoS 2 . This technique makes use of a substrate whose surface chemistry and orientation play a crucial role in the segregation and chemical interaction of precursors to form 2D MoS 2 .…”
Section: Introductionmentioning
confidence: 99%