Autocatalytic Deposition of Gold and Palladium onto n ‐ GaAs in Acidic Media

Stremsdoerfer, G.; Perrot, Hubert; Martin, J. R.; Cléchet, P.

doi:10.1149/1.2095453

Cited by 63 publications

(54 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Si~si/OH+ 2e Si/~\(~H [5] As indicated in the equilibrium energy band diagram of Si ( Fig. 5b and 6b), there is no restriction of electrons flowing from both n-St and p-St to the electrolyte.…”

Section: Etching and Passivation--bothmentioning

confidence: 94%

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

Chen

Lien

et al. 1995

J. Electrochem. Soc.

View full text Add to dashboard Cite

The energy band diagram of n-St in aqueous 2M KOH is constructed by the measured open-circuit potential and the flatband voltage. A photocurrent suseeptivity method was proposed to determine the flatband voltage. A flatband voltage of -1.04 V/SCE (saturated calomel electrode) for the n-St in 2M KOH was determined by this new method. The energy band diagram of the p-St in the same electrolyte is also constructed. Accumulation of carriers at the n-Si/KOH interface is predicted by the band diagram and confirmed by the ohmic-contact-like I-V curve. Depletion of carriers at p-Si/KOH interface is predicted by the band diagram and confirmed by the rectifying I-V characteristics. The passivation of Si under anodic bias is attributed to the formation of an oxide film. The competition between the oxidation rate and the diffusion rate of oxidation product determines whether the anodic oxidation is an etching or passivation process. The etching oxidation is assumed to be dominated by the electrochemical reaction. The transport of these carriers which participate in the electrochemical reaction can be explained by the energy band diagram. All etching or passivation phenomena are consistent with the prediction from the band diagram viewpoint. The etch stop for heavily doped Si is attributed to the enhanced growth rate of oxide film under high carrier concentration.The energy band diagram of the semiconductor electrode is a useful tool for understanding transport phenomena of the carriers in the electrochemical reaction, such as eleetrodeposition or electroless deposition of metal onto semiconductor; selective etching and decomposition of the semiconductor electrode. I-~ To construct the energy band diagram of Si in aqueous KOH, which is involved in the anisotropic etching reaction, is useful in understanding the carrier-transport phenomena as well as the etching mechanism.The anisotropic etching of Si in the alkaline electrolyte has long been recognized and employed in the fabrication of microstructures such as diaphragms, 6-8 cantilever beams, ~ grooves, I~ etc. These mierostructures are important in the manufacture of mierosensors and microactuators which can be integrated in a single chip. The widespread application of the anisotropie etching techniques ca]is for the construction of the quantitative energy band diagram of Si in the alkaline electrolyte to describe the transport of carriers during etching. Palik et al., 11.~2 and Ozdemir and Smith ~3 qualitatively explained the I-V behaviors of Si in KOH by using a simple qualitative energy band diagram. Seidel et al. 14 constructed the energy band diagram of Si in the alkaline electrolyte by aligning the Fermi level between the Si and the electrolyte. They attributed the Fermi level of electrolyte (HzO/OH-) to be 0.8 V/NHE (normal hydrogen electrode) which is the standard redox potential modified by the Nernst equation. Sundaram and Chang also constructed the energy band diagram of Si in hydrazine to give a qualitative explanation of the different I-V behaviors for n-and p-...

show abstract

Section: Etching and Passivation--bothmentioning

confidence: 94%

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

Chen

Lien

et al. 1995

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…As a consequence, nucleation of new particles is prevented for the benefit of the growth of larger particles. [32] The final particle size is thereby controlled by the amount of metal ions and the reaction time.This technique, however, is not applicable to unmodified surface-deposited nanoparticles. As there is no covalent or electrostatic interaction between the particles and the substrate, we observed that the pattern geometry is destroyed during the growth procedure.…”

mentioning

confidence: 99%

Synthesis of Quasi‐Hexagonal Ordered Arrays of Metallic Nanoparticles with Tuneable Particle Size

2008

View full text Add to dashboard Cite

Noble-metal nanoparticles (Au, Ag, Pt, Pd) are of substantial interest for various scientific and technical applications [1] because they exhibit a number of unique optical, [2][3][4] electronic, [5,6] and catalytic [7,8] characteristics compared to bulk materials. It is important to realize that nearly all of these properties are a function of the particle size and shape at the nanometer scale.The size-dependent interaction of light with small particles, referred to as localized surface-plasmon resonance (LSPR), [9] and coupled-plasmon resonance [10] enables them to be used for various applications such as biosensors [11] and molecular rulers. [12] Spectroscopic techniques such as surface enhancedRaman spectroscopy (SERS), [13,14] nonlinear scattering experiments, for example, second-harmonic generation (SHG), [15,16] and time-resolved methods [17][18][19] have been developed, each of them sensitive to the electronic properties of the metallic nanoparticles and their interaction with electromagnetic waves as a function of the particle diameter and particle-particle spacing. [20] However, the generation of nanostructures with feature sizes smaller than 100 nm relies on conventional lithographic techniques such as electron-beam (e-beam), X-ray, and photolithography. [21] All these methods, summarized as top-down technology, are rather complicated, timeconsuming, and require expensive technical equipment. An alternative route is offered by the so called bottom-up technology. Scanning probe microscopy (SPM) techniques like ''dip-pen'' nanolithography [22] are capable of preparing nanostructures with feature sizes down to 10 nm with excellent spatial resolution. Their disadvantage is low throughput, as a consequence of being a serial process. In contrast, microcontact printing [23] enables a rapid and parallel fabrication of chemical and topological micro-and nanostructures. Here the resolution is limited by the mechanical properties of the stamp and the contact stability between the stamp and the substrate.Lithographic techniques based on self-assembly are particularly attractive since they offer the large-scale fabrication of feature sizes down to a few nanometers with predefined molecular and colloidal properties. Nanosphere lithography [24][25][26] has been reported to be capable of producing highly ordered metallic nanoparticle arrays with well-defined size and shape based on pure self-assembly. Crystalline monolayers of self-assembled polystyrene spheres act as a template for the vapor deposition of metals such as gold or silver. The in-plane diameter, shape, and spacing between the metal clusters are related to the diameter of the colloidal spheres. As a consequence, it is not possible to control the structural parameters independently from each other, which is limiting the general applicability. Therefore a nanofabrication technique that allows a fast, substrate-independent, and inexpensive sample processing with the possibility to independently adjust the structural parameters, such as size and spacing, at a...

show abstract

“…It is widely used in many industrial fields, such as oil and gas, aviation, automotives, and microelectronics. [10][11][12][13][14][15] Standard electroless plating of nonconductive substrates requires preliminary surface treatment for effective absorption of the catalyst. For example, NaOH was previously used for the preliminary surface treatment of Si 3 N 4 .…”

mentioning

confidence: 99%

Electroless Plating of Silicon Nitride Using (3-Aminopropyl) Triethoxysilane

Holtzman

Richter

2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this work we demonstrate electroless Cu and Ni-P ͑using both alkaline and acidic solutions͒ metallization of a silicon nitride surface. This was done by surface pretreatment with NH 2 functionalization via silanization, followed by adsorption of Pd/Sn nanoparticles onto the surface. Using this method, films of Ni-P and Cu were created and characterized. As a possible application we demonstrate metallization of atomic force microscope probes by Ni-P and Au ͑on top of the Ni-P from the acidic solution͒. Silicon nitride ͑Si 3 N 4 ͒ is an important industrial material due to its unique qualities of high-temperature strength, 1,2 excellent shock and wear resistance, 2,3 low dielectric constant, and chemical stability. It is commonly used in the manufacture of gas turbines, 4 balls and bearings, 5 and in insulation and passivation in microelectronics. 6-9 Efficient metallization techniques can help overcome some of the disadvantages attributed to Si 3 N 4 , mainly its bad fracture, and enable new applications for this material. One possible plating technique, which is commonly used to plate other dielectric materials, is electroless plating.Electroless plating presents an easy, cost-effective, and efficient technique for plating conductive as well as nonconductive materials. It is widely used in many industrial fields, such as oil and gas, aviation, automotives, and microelectronics. [10][11][12][13][14][15] Standard electroless plating of nonconductive substrates requires preliminary surface treatment for effective absorption of the catalyst. For example, NaOH was previously used for the preliminary surface treatment of Si 3 N 4 . 16 This procedure etches the surface and increases its roughness. These effects might be problematic in some applications, especially where the thickness of the substrate is small and minimal damage is preferable. In addition, the catalyst placed over the roughened surface adheres rather poorly due to the absence of chemical bonding between the two.Recently, there has been growing use of organosilane molecules to improve the absorption of metallic nanoparticles/colloids to surfaces. 17-27 Several studies have been performed using mainly aminosilane and mercaptosilane molecules, in order to improve catalyst adsorption for electroless plating. In this way, various metals have been plated over glass, 17,18 silicon-oxide, 19-23 mica, 24 polyimide, 25 and poly͑tetrafluoroethylene͒. 26,27 In this work ͑3-aminopropyl͒ triethoxysilane ͑APTES, Fig. 1c͒ is used as the binding agent between the catalyst and the substrate. For better APTES coverage, the Si 3 N 4 was treated with HNO 3 , which increases the number of OH groups on the surface. 28 The catalyst used in this work is Pd/Sn colloids. The colloidal solution of the catalyst is acidic, as it contains HCl. Once a substrate, covered with APTES, is immersed in the catalyst solution, the amine group of the APTES is protonated and becomes positively charged. It is well known that the catalyst colloids are negatively charged ͑probably due to SnCl 3 ...

show abstract

Autocatalytic Deposition of Gold and Palladium onto n ‐ GaAs in Acidic Media

Cited by 63 publications

References 11 publications

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

Synthesis of Quasi‐Hexagonal Ordered Arrays of Metallic Nanoparticles with Tuneable Particle Size

Electroless Plating of Silicon Nitride Using (3-Aminopropyl) Triethoxysilane

Contact Info

Product

Resources

About