Automated antenna detection and correction methodology in VLSI designs

Abstract

As more and more devices are packed on a single chip and as the complexities of VLSI designs are increasing, antenna detection and correction is becoming increasingly challenging task. The paper presents a methodology, which employs combination of prevention and correction of antennae at various stages of ASIC (Application specific Integrated Circuits) design flow such as cell library development, block design flow and chip design flow. The methodology advocates adding protection diodes only in certain number of cells in the library. We have implemented this methodology in our ASIC design flow and are able to solve antenna issues in designs with negligible impact to die size (2-4% increase in die-size in less than 5% of the designs) and performance (0.3%-0.6% worst case impact to delay). Due to this methodology, number of antennae in the final layout reduced to very small number and even to zero in some cases, and we were able to save the time involved in correcting antennae.

Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics

“…20) Since this charging damage is considered to be inevitable in present-day plasma equipment, the antenna design rules have been introduced in device designs to minimize the damage. 32,33) From a plasma design point of view, plasma parameters such as plasma density and electron temperature, which determine electron and ion currents (J e and J i , in Fig. 1) and the directionality difference between electrons and ions, should be optimized 34) to reduce the damage.…”

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

“…[15][16][17][18][19] The damage is usually quantified by measuring the gate leakage current increase 16,17) and threshold voltage shift (ÁV th ). 15,19) Since this charging damage is considered to be inevitable in present-day plasma equipment, antenna design rules that limit the maximum antenna ratio in circuits [20][21][22] and protection diode schemes 13,14,20,[23][24][25][26] have been introduced to minimize the damage. Although various protection diodes have been proposed and introduced into the circuit, the ability to suppress charging damage is believed to be structure-and process-dependent.…”

Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

“…(2) The insertion of protection diodes may lead to the enhancement of the variation in device performance. Therefore, in particular, consideration of the effect of antenna ratio range (on the order of 10 0 -10 3 ) 28,29) on ÁV th variation is indispensable. Furthermore, the antenna design rules should be revised to suppress ÁV th .…”

“…Since this charging damage is considered to be inevitable in present-day plasma equipment, the antenna design rules that limit the maximum r in circuits and the protection diode scheme have been introduced to minimize this damage. 28,29) It is widely believed that plasma charging current is determined by plasma parameters (plasma density and electron temperature 30) ) and the device layout design (antenna ratio and antenna aspect ratio): thus, one should consider the V th variations induced by the charging damage. Although various protection diodes are proposed and introduced into the circuit, the ability to suppress the charging damage is believed to be structure-dependent.…”