Automated array assembly. Final report

D'Aiello, R.V.

doi:10.2172/6866827

Cited by 4 publications

(9 citation statements)

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“…Also, because of the square geometry and the somewhat rough texture of the etched surfaces, our normal method of applying a spin-on liquid TiO base AR coating was abandoned in favor of a spray-on process. This metho~ [10] has proven to be very satisfactory for single-crystal silicon cells with smooth etched surfaces. However, for the cells made on grade 2P (II) substrates, the etch (HF:HN0 1 :CH 3 COOH;l:2:2) left the surfaces of some of the grains with a Lexlu.ted-llke Iinish which caused these grains to be only partially covered by the spray process.…”

Section: Large-area Solar Cellsmentioning

confidence: 99%

Low-cost epitaxial techniques for solar-cell fabrication. Final report, 25 September 1979-24 September 1980

D'Aiello¹,

Robinson²

1980

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This research and development effort was designed to investigate epitaxial growth processes which will allow the use of low-cost forms of silicon for fabricating high-efficiency, cost-effective solar cells. This report covers the results of a 1-year effort which involved characterization of potentially low-cost silicon substrates, epitaxial growth studies, and the fabrication and evaluation of solar cells made in the epitaxial layers. Three grades of generic metallurgical grade (MG) silicon material designated upgraded metallurgical grade (UMG) silicon were investigated in some detail. These three grades have a wide range of purity, defect structure, and crystallinity, all of which are representative of the characteristics expected in future low-cost silicon. The electrical, physical, and structural properties of this material were measured. An initial epitaxial growth technique was standardized and qualified for application to the growth-of'diagnostic and solar-cell structures. Such structures were grown on the three UMG grades of substrates, and the properties of these layers were compared to those of the substrates. It was generally found that the defect density in the epiiaxial films wa~ lower than in the substrates, but greater aerial variation was observed for the less pure, multicrystalline grades of substrates. Sol•a•r cells were fabricated in epitaxial structures grown on all three UMG grades' of substrates. With a 15-~m-thick epitaxial structure grown on the purest form of UMG substrate, an average cell AM-1 efficiency of 12.5% was obtained. •similar structures grown on the less pure multicrystalline substrate grades result •in efficiencies of 9 to 10.3%. A novel way of slicing these substrates which•exposes larger grain areas was implemented and resulted in higher average artd peak efficiencies for cells made on such substrates. Two additional substrate materials which-were obtained •from other research efforts supported by SERI were briefly explored. On one of these, a silicon ingot solidified by the HEM method applied to MG sili'c•on, epitaxial cells of efficiency as high as 12% were obtained. The second material was representative of the early• stages of a low-cost substrate development program, and peak effiCiencies of•about 10% were obtained, but material defects resulted in a large variation •in •cell performance. The limitations experienced with these preliminary niateriais are pointed out. The practical aspects of making epitaxial •solar celis were explored by growing and fabricating large-area cells. In this work, a si~nificant achievement ~as the attainment of efficiencies close to 10% with epitaxial cells of 10.8-cm area grown on zhe lowes~ ~rade silicon S!lbstrat: under study. For larger areas (23.1 em) an eff1c1ency of 7.0% was obta1ued. The use of low-cost surface preparation techniques was successfully for both epitaxial growth arid the resultant solar-cell properties. ments on the surface finish obtainable with chemical etchants which the subsequent application of AR coatings are poizit...

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Section: Large-area Solar Cellsmentioning

confidence: 99%

Low-cost epitaxial techniques for solar-cell fabrication. Final report, 25 September 1979-24 September 1980

D'Aiello¹,

Robinson²

1980

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“…If a p-doped layer is to be formed, boron trichloride (Be13) is used as a boron dopant source (17,18,20,21,25,28,31,32).…”

Section: Diffusion-cvd--mentioning

confidence: 99%

“…One reported cycle includes 10 minutes preheat in N2, 4S minutes with POC13 flowing by a programmed puller (32), and 10 minutes in N2-10 percent 02 while the wafers are slowly withdrawn.…”

Section: Diffusion-cvd--mentioning

confidence: 99%

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Industrial hygiene characterization of photovoltaic solar cell industry.

1980

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The search for viable alternative energy sources has intensified interest in photovoltaic technologies. Although this industry is currently very small, rapid growth is anticipated during the remainder of this century. This expected growth in the production of photovoltaic devices and related base materials and its attendant increased work force warrant an evaluation of the potential occupational health and safety hazards of the industry. The information presented in this report is based on a comprehensive literature review and walk-through surveys of 14 production or" research and development facilities. The investigation covers the technology from base material preparation through final module assembly~D escriptions are given of major technologies under development and the associated chemical and physical agents to which workers could be exposed. In-depth sampling surveys were conducted. Industrial hygiene concerns connected with each major technology are presented. Available health effects literature is listed for the chemicals used in all reviewed technologies. The investigation revealed that of the facilities surveyed, the industry presently appears to be generally well controlled, especially as to the single crystal silicon technology which is the most highly developed technology in the industry. Comprehensive industrial hygiene sampling was performed in a few facilities regarded as representing the norm. With the exception of elevated exposures to silver during grid metalization in one facility and to arsenic during gallium arsenide wafer production in another facility, all other exposures monitored were well within the standards. It must be realized, however, that toxic compounds are used and continued surveillance within the industry during its growth should be maintained.

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“…The RCA II titanium ethoxide-based alternative preparation was not included since i t offers no advantages over RCA I, has a shorter shelf life, and is more expensive. Formulation of the source solutions, application by centrifugal spinning, heat treatment of the films, and ellipsometric measure~ ments of refractive index and film thickness were performed as described previously [19] • Polished single-crystal silicon wafers were used as control substrates for the optical measurements.…”

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confidence: 99%

Automated array assembly. Phase II. Final report, October 1977-December 1979

D'Aiello¹

1980

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Automated array assembly. Final report

Cited by 4 publications

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Low-cost epitaxial techniques for solar-cell fabrication. Final report, 25 September 1979-24 September 1980

Low-cost epitaxial techniques for solar-cell fabrication. Final report, 25 September 1979-24 September 1980

Industrial hygiene characterization of photovoltaic solar cell industry.

Automated array assembly. Phase II. Final report, October 1977-December 1979

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