46th ARFTG Conference Digest 1995
DOI: 10.1109/arftg.1995.327134
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Automated Large-Signal Load-Pull Characterization of Adjacent-Channel Power Ratio for Digital Wireless Communication Systems

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Cited by 23 publications
(10 citation statements)
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“…This expression assumes that only third-order nonlinearities determine out-of-band power, although it can be used with some modifications for examining the effects of higher order nonlinearities as well. Experimentally, it has been demonstrated that the IM3 and ACPR track each other closely as predicted by (2), and as the data in [31] demonstrates (see Fig. 8).…”
Section: B Power Amplifiersmentioning
confidence: 56%
“…This expression assumes that only third-order nonlinearities determine out-of-band power, although it can be used with some modifications for examining the effects of higher order nonlinearities as well. Experimentally, it has been demonstrated that the IM3 and ACPR track each other closely as predicted by (2), and as the data in [31] demonstrates (see Fig. 8).…”
Section: B Power Amplifiersmentioning
confidence: 56%
“…The efficiency and spectral spreading of a device have both been shown to be functions of the amplifier's load impedance [5,6]. Wu connects ACPR results for broadband signals with predictions based on third-and fifth-order intermodulation results from two-tone tests [7].…”
Section: Introductionmentioning
confidence: 99%
“…With the advanced improvements in the baseband algorithms as well as the development of more complex modulation techniques, the traditional metrics such as P1dB and IP3 obtained from oneand two-tone stimuli can no longer be used to fully predict the system's performance; this is simply due to the fact that signals represented by discrete spectra do not reflect the complex digitally modulated signals. Furthermore that the performance of a transistor is closely related to the type of signal being used during the measurements [1], [2]. Therefore, it is of significant importance to study the characteristic of transistors under realistic conditions (using modulated RF signals) to obtain a better understanding of the transistor performance.…”
Section: Introductionmentioning
confidence: 99%