T h e process of single crystal pulling is considered with siniultaneous st,arting iimterial make-up into t h e melt and heater temperature control in response to a signal generated 1)y t h e electronic contact melt level sensor, viz. : (i) conditions ensuring t h e radial broadening steadiness; (ii) effect of melt level displacernent, inelt ternperatlire changes, changes of solitl/liqiiid interface shape, melt evaporation on t h e growing crystal dittrneter; (iii) conditions of crystal purification from impurities and uniform tlistrilmtion of dopant.