Automatic Defect Detection in Epitaxial Layers by Micro Photoluminescence Imaging

Frascaroli, Jacopo; Tonini, Marta; Colombo, Selene; Livellara, Luisito; Mariani, Luca; Targa, Paolo; Fumagalli, Roberto; Samu, Viktor; Nagy, M.; Molnár, Gábor; Horváth, Ágnes; Bartal, Zoltan; Kiss, Zoltán; Sipőcz, Tamás; Mica, I.

doi:10.1109/tsm.2022.3189847

IEEE Trans. Semicond. Manufact.

2022

DOI: 10.1109/tsm.2022.3189847

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Automatic Defect Detection in Epitaxial Layers by Micro Photoluminescence Imaging

Jacopo Frascaroli

Marta Tonini

Selene Colombo

et al.

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Cited by 4 publications

References 19 publications

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Recombination Activity of Crystal Defects in Epitaxially Grown Silicon Wafers for Highly Efficient Solar Cells

Rittmann,

Supik,

Drießen

et al. 2024

Physica Status Solidi (a)

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Aiming for highly efficient solar cells based on wafers with a low carbon footprint, silicon (Si) EpiWafers are grown epitaxially on reusable, highly doped Si substrates with a stack of porous Si layers (PorSi) for detachment. A state‐of‐the‐art p‐type Si EpiWafer exhibiting a minority charge carrier lifetime of up to 2.2 ms detected at an excess charge carrier density of ≈1 × 1015 cm−3 by photoluminescence (PL) imaging is presented. This translates to a predicted solar cell efficiency of 25.6%, calculated by efficiency limiting bulk recombination analysis (ELBA), and corresponds to losses of less than 1%abs compared to the theoretical limit of the investigated solar cell concept. A detailed loss analysis shows that the major remaining quality limitations are structural defects, specifically stacking faults (SFs). Therefore, the recombination activity of isolated SFs in epitaxially grown reference (EpiRef) wafers on polished substrates without a PorSi is assessed by highly resolved μPL mappings. The recombination activity rises with the number of dislocations within an SF as demonstrated by a comparison to microscope images. When using highly doped substrates, as currently required for EpiWafer fabrication, EpiRef wafers show more SFs exhibiting additionally a higher number of dislocations than SFs in EpiRef wafers on moderately doped substrates.

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Recombination Activity of Crystal Defects in Epitaxially Grown Silicon Wafers for Highly Efficient Solar Cells

Rittmann,

Supik,

Drießen

et al. 2024

Physica Status Solidi (a)

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Measurement of local recombination activity in high diffusion length semiconductors

Heinz,

Oezkent,

Rittmann

et al. 2023

Solar Energy Materials and Solar Cells

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Ultrathin silicon wafer defect detection method based on IR micro-digital holography

2023

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Ultrathin silicon wafers are key components of wearable electronic devices and flexible electronics. Defects produced during the preparation process of ultrathin silicon wafers have a great influence on the electronic performance. A high-precision, nondestructive, and rapid damage detection method is urgently needed. IR digital holography has the advantage of being insensitive to visible light and environmental interference. In addition, micro-holography can achieve micro-target scaling with large range scaling. An ultrathin silicon wafer defect detection method of IR micro-digital holography is proposed in this paper for what we believe is the first time. Using the proposed defect detection method based on holography, the detection accuracy reached the submicron level.

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Automatic Defect Detection in Epitaxial Layers by Micro Photoluminescence Imaging

Cited by 4 publications

References 19 publications

Recombination Activity of Crystal Defects in Epitaxially Grown Silicon Wafers for Highly Efficient Solar Cells

Recombination Activity of Crystal Defects in Epitaxially Grown Silicon Wafers for Highly Efficient Solar Cells

Measurement of local recombination activity in high diffusion length semiconductors

Ultrathin silicon wafer defect detection method based on IR micro-digital holography

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