Automatic Generation of Measurement Recipe for CD-SEM Using Design Data

Miyamoto, Atsushi; Nishiura, Tomofumi

doi:10.2493/jjspe.81.1102

Cited by 2 publications

(3 citation statements)

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“…We adopt the method described in literature, 12,13 to measure edge positions in SEM images. Figure 3B shows SEM image of a line pattern; we use the coordinate x l of left edge in this pattern to explain about measurement.…”

Section: Evaluation Points To Be Extractedmentioning

confidence: 99%

“…SEMs are provided with functions to automatically capture and measure evaluation points, 11,12 and in combination with the proposed method, the entire process from determination of evaluation points through imaging and measurement can be automated. Here, design data pertain to files storing edge information of design shapes as coordinate data; there are file formats developed for this purpose such as GDS-II and OASIS.…”

Section: Introductionmentioning

confidence: 99%

“…In the proposed method, positional relationship between a pair of edges in upper and lower layers is evaluated using multiple indices to extract measurable evaluation points. SEMs are provided with functions to automatically capture and measure evaluation points, 11,12 and in combination with the proposed method, the entire process from determination of evaluation points through imaging and measurement can be automated.…”

Section: Introductionmentioning

confidence: 99%

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Automatic extraction technique of CD‐SEM evaluation points to measure semiconductor overlay error

Miyamoto

Kawahara

2019

Elect Comm in Japan

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In semiconductor device manufacturing process, it is necessary to measure overlay error between integrated layers. As semiconductor process design rules continue to shrink, small overlay error comes to lead to the fatal fault of the device electrical property. As a result, the needs for the dense overlay measurement in the chip with the use of circuit pattern increase. We propose an automatic extraction technique of the evaluation points (EPs) that are suitable for the overlay measurement by scanning electron microscopy using design data of the device pattern layout. The proposed algorithm extracts all measureable patterns by evaluation of the positional relationship between a segment pair on the upper and lower layers by plural selection indices. Simulation was performed to estimate the overlay error distribution within the shot area using the EPs automatically extracted by the proposed method. The standard deviations of estimation errors in the x-and y-directions were 0.06 nm and 0.10 nm (3ó), respectively. It was confirmed that distortion in the exposure apparatus can be estimated automatically and highly accurately. K E Y W O R D Sautomation, design data, overlay measurement, scanning electron microscope (SEM) 36

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Section: Evaluation Points To Be Extractedmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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