Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm

Abstract

Machine Learning In article number http://doi.wiley.com/10.1002/aisy.202200302, Cheol E. Han, Jae Woo Lee, and co‐workers propose an automatic‐prediction method of the metal–oxide–semiconductor field‐effect transistors MOSFET Vth (threshold voltage) using machine learning (ML). The ML model eliminates the ambiguity in Vth extraction and provides objective Vth prediction for most FET schemes used in the semiconductor industry and research field.