Automatic prediction of MOSFETs threshold voltage by machine learning algorithms

Choi, Seoyeon; Park, Dong Geun; Kim, Min Jung; Bang, Seain; Kim, Jungchun; Jin, Seunghee; Huh, Ki Seok; Kim, Dong-Hyun; Kim, Sang‐Hyeok; Yoon, Inkyu; Mitard, J.; Han, Cheol E.; Lee, Jae Woo

doi:10.1109/edtm55494.2023.10103059

2023 7th IEEE Electron Devices Technology &Amp; Manufacturing Conference (EDTM) 2023

DOI: 10.1109/edtm55494.2023.10103059

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Automatic prediction of MOSFETs threshold voltage by machine learning algorithms

Seoyeon Choi

Dong Geun Park

Min Jung Kim

et al.

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2024

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Enabling of CMOS Circuit using Dual Material Gate Germanium Pocket Induced FDSOI MOSFET

Singh,

Mishra,

Akhter

2024

Wseas Transactions on Circuits and Systems

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This research presents a comparison of the electrical performance of a double-side induced germanium-pocket (IGP) FD-SOI MOSFET and a dual material gate IGPFDSOI (DIGPFDSOI). The electrical performance is reviewed by comparing the device parameters like drain current, band diagram, lateral electric field, surface potential, and work function of the gate material. The proposed structure exhibits excellent characteristics compared to the IGPFDSOI MOSFET. The proposed structure has a greater Ion/Ioff ratio, a lower subthreshold slope, reduced capacitance, and an elevated cut-off frequency. The implementation of a dual metal gate is considered a superior method in comparison to FD-SOI technology because it effectively reduces the negative effects of scaling. A study is being done to analyze the differences in the work functions of metal gates to evaluate the effectiveness of the proposed construction. The comparison evaluation shows that the suggested design can be used for both digital and analog tasks because it has a higher switching frequency and a better cut-off frequency. Apart from this, the proposed structure can also be implemented without making substantial changes to the conventional FD-SOI MOSFET fabrication process flow. Here, we are using n-type and p-type DIGPFDSOI MOSFETs to make a CMOS converter circuit. Sentaurus TCAD is used to simulate and analyze the performance of the proposed structure.

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Enabling of CMOS Circuit using Dual Material Gate Germanium Pocket Induced FDSOI MOSFET

Singh,

Mishra,

Akhter

2024

Wseas Transactions on Circuits and Systems

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show abstract

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Automatic prediction of MOSFETs threshold voltage by machine learning algorithms

Cited by 1 publication

References 2 publications

Enabling of CMOS Circuit using Dual Material Gate Germanium Pocket Induced FDSOI MOSFET

Enabling of CMOS Circuit using Dual Material Gate Germanium Pocket Induced FDSOI MOSFET

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