Avalanche behaviour and its temperature dependence of commercial SiC MPS diodes: Influence of design and voltage class

Rupp, Roland; Gerlach, R.; Kabakow, A.; Schörner, Reinhold; Hecht, Ch.; Elpelt, Rudolf; Draghici, Mihai

doi:10.1109/ispsd.2014.6855977

Cited by 36 publications

(10 citation statements)

References 2 publications

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“…However, the device fabrication process technologies also have strong effects on the surge capability, especially the P+ region implantation and P+ ohmic contact process [ 9 ]. For the P+ region implantation, the implantation dose and temperature can affect the surface morphology and crystal quality of the implant region [ 10 , 11 ]. The surface and crystal defects can reduce the minority carrier density, and thus reduce the bipolar current.…”

Section: Introductionmentioning

confidence: 99%

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Ren

et al. 2021

Materials

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This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%.

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Section: Introductionmentioning

confidence: 99%

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Ren

et al. 2021

Materials

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“…The calculation makes use of the Current density -Voltage measurements (J-V) of a similar 1.2kV power diode with 10A rated available in [59], which in turn can be correlated with information from [60] and our own measurements. It also assumes a honeycomb layout design [61].…”

Section: H-sic Epimentioning

confidence: 99%

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Arvanitopoulos

Antoniou

Perkins

et al. 2019

IEEE Trans. on Ind. Applicat.

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Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C-and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.

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“…To accommodate a wide range of applications, SiC UV photodetectors with various structures, including schottky [9,10], metal-semiconductor-metal (MSM) [11], p-i-n and avalanche [7,12], have been developed. The advantages of the SiC MSM structure and Schottky barrier photodetector include the simplicity of manufacture [13,14].…”

Section: Introductionmentioning

confidence: 99%

Study on SiC UV/EUV Coaxial Photodetector

Liang

Liu

et al. 2023

J. Phys.: Conf. Ser.

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In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.

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Avalanche behaviour and its temperature dependence of commercial SiC MPS diodes: Influence of design and voltage class

Cited by 36 publications

References 2 publications

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Study on SiC UV/EUV Coaxial Photodetector

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