Avalanche breakdown in read diodes and pin diodes

Gibbons, G.; Sze, Simon M.

doi:10.1016/0038-1101(68)90083-x

Cited by 19 publications

(3 citation statements)

References 9 publications

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“…The breakdown voltage does not vary when the width of the depletion region changes. [ 38 ] Under the condition of V FB < V < V B , the band structure and the electric field distribution of the device are shown in Figure 3e,j, respectively.…”

Section: Basic Structures and Working Mechanisms Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.

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Section: Basic Structures and Working Mechanisms Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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“…There are calculations of breakdown voltages for Read diodes specifically for niicrowave performance by Gibbons and Sze [7]. Yet, an analysis of the breakdown behaviour is not carried out by Gibbons and Sze. For i t only a small number of computed curves from Conradi [8] are known to fit his experimental results on silicon avalanche photodiodes.…”

Section: Introductionmentioning

confidence: 99%

Multiplication Factors and Breakdown Voltages of Silicon Read Diodes with Wide Depletion Regions

Behrendt

1975

Phys. Stat. Sol. (a)

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The multiplication factors and the breakdown voltages for Si Read diodes with wide depletion regions have been computed numerically. The breakdown behaviour of the idealized Read diode is determined by the four most important parameters of the vertical structure: the impurity concentrations in the avalanche region and in the drift region and the width of these zones. Evaluating the standard integrals for the determination of multiplication factors the integration limits must be selected carefully because the limits are different for n+pπp+‐ and complementary p+nνn+‐junctions. The results are presented in a manner suitable for the optimization of the device design in particular for avalanche photodiodes. The numerical results for the idealized Read diodes are compared with the results for hyperabrupt diodes with real impurity profil and diffusion experiments.

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“…Thus forward current is due to carriers of both signs. The mechanism of double injection in 'long' structures has been studied most extensively by Lampert (1962), and many valuable experiments have been carried out by others (Howard and Johnson 1965, Larrabee 1961, Gibbsons and Sze 1968, Moore et al 1967, Hoffman and Schuster 1964. The present investigation is concerned with 'short' structures, however, in which the crystal thicknesses are comparable with the diffusion length of the charge carriers and for which no quantitative theory is available.…”

Section: Introductionmentioning

confidence: 99%

An experimental study of two-carrier currents in short germanium structures

Büget¹

1971

J. Phys. D: Appl. Phys.

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The dependence of forward current upon the height of the drain potential step in a metal-semiconductor-metal structure was investigated using the current-voltage characteristics of Al-p-type Ge-Au diodes in forward and reverse bias at various temperatures. It was observed in forward bias that the current was two-carrier type when ϕh>ϕe and one-carrier type when ϕh<ϕe where ϕh and ϕe are the drain (Au) potential steps for holes and for electrons respectively. The two-carrier current was much smaller than the one-carrier current.

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Avalanche breakdown in read diodes and pin diodes

Cited by 19 publications

References 9 publications

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Multiplication Factors and Breakdown Voltages of Silicon Read Diodes with Wide Depletion Regions

An experimental study of two-carrier currents in short germanium structures

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