AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND UNEARLY GRADED <i>p-n</i> JUNCTIONS IN Gc, Si, GaAs, AND GaP

Sze, Simon M.; Gibbons, G.

doi:10.1142/9789814503464_0011

Cited by 15 publications

(38 citation statements)

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“…The cathodes are also connected to the buried layer through an n + plug. As found in [17], for one-sided abrupt junctions with a background doping of 10 17 cm −3 , the maximum electric field at breakdown in Si is approximately 5 × 10 5 V/cm. From the simulated electric field distribution graph in Fig.…”

Section: Device Fabricationsupporting

confidence: 61%

UV-sensitive low dark-count PureB single-photon avalanche diode

Mok

Charbon

et al. 2013

2013 Ieee Sensors

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Abstract-A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of 7 µm 2 . An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.Index Terms-Avalanche breakdown, boron, chemical vapor deposition (CVD), Geiger-mode avalanche photodiode, singlephoton avalanche diode (SPAD), ultrashallow junctions, ultraviolet (UV).

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Section: Device Fabricationsupporting

confidence: 61%

UV-sensitive low dark-count PureB single-photon avalanche diode

Mok

Charbon

et al. 2013

2013 Ieee Sensors

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“…Indeed, with a different diode structure Baertsch [94] presented significantly better agreement to McIntyre's theory, highlighting the difficulties in obtaining reproducible results. Sze and Gibbons [95] re-calculated the ideal (microplasma-free) breakdown voltages for both abrupt and linearly graded junctions for several bulk materials including Silicon, Germanium and alternative III-V alloy diodes. This allowed other researchers to estimate the departure of their devices from the ideal, entirely uniform breakdown characteristics.…”

Section: Microplasma Experimental Observations and Theoriesmentioning

confidence: 99%

Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

Fisher¹

2018

Photon Counting - Fundamentals and Applications

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The historical development of technology can inform future innovation, and while theses and review articles attempt to set technologies and methods in context, few can discuss the historical background of a scientific paradigm. In this chapter, the nature of the photon is discussed along with what physical mechanisms allow detection of single-photons using solid-state semiconductor-based technologies. By restricting the scope of this chapter to near-infrared, visible and near-ultraviolet detection we can focus upon the internal photoelectric effect. Likewise, by concentrating on single-photon semiconductor detectors, we can focus upon the carrier-multiplication gain that has allowed sensitivity to approach the single-photon level. This chapter and the references herein aim to provide a historical account and full literature review of key, early developments in the history of photodiodes (PDs), avalanche photodiodes (APDs), single-photon avalanche diodes (SPADs), other Geiger-mode avalanche photodiodes (GM-APDs) and silicon photo-multipliers (Si-PMs). As there are overlaps with the historical development of the transistor (1940s), we find that development of the p-n junction and the observation of noise from distinct crystal lattice or doping imperfections -called "microplasmas" -were catalysts for innovation. The study of microplasmas, and later dedicated structures acting as known-area, uniform-breakdown artificial microplasmas, allowed the avalanche gain mechanism to be observed, studied and utilised.

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“…There is however a tradeoff between increased junction isolation by increasing the n-well doping concentration and reduced reverse breakdown voltage. With increasing doping, the internal electric field increases and the reverse junction breakdown voltage decreases [15,16]. The breakdown voltage decreases from ~ 50 V to ~10 V when the impurity concentration increases from The curvature of the tether corner and the curvature of the junction regions must also be considered.…”

Section: Junction Isolation Issuesmentioning

confidence: 99%

Microfabrication of a wall shear stress sensor using side-implanted piezoresistive tethers

Nishida

Arnold

et al. 2007

SPIE Proceedings

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This paper presents the microfabrication process of a MEMS piezoresistive shear stress sensor for direct, quantitative measurement of time-resolved, fluctuating wall shear stress. The sensor structure integrates shadow side-implanted diffused resistors into the sensor tethers for detecting in-plane deflection. Temperature compensation is achieved by integrating a fixed, dummy Wheatstone bridge adjacent to the active shear stress sensor. The device is fabricated from an SOI wafer using an 8-mask process. A phosphorus blanket implantation forms an n-well to ensure P/N junction isolation. Boron implantation forms a heavily doped Ohmic contact. The tethers and floating element are defined by patterning PECVD oxide via RIE and DRIE. The Si is etched vertically to 8 µm via DRIE to form the trench for the sidewall implant. The scallops formed on the sidewalls during DRIE are smoothed by hydrogen annealing. After a preamorphization implant, boron is implanted at an oblique angle of 54˚ to achieve a 5 µm shadow side-wall implantation. The structure is released from the backside using a combination of DRIE and RIE to etch the silicon, oxide, and nitride layers. Finally, the sensors are annealed in forming gas. Preliminary electrical testing indicates linear, junction-isolated resistors.

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AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND UNEARLY GRADED p-n JUNCTIONS IN Gc, Si, GaAs, AND GaP

Cited by 15 publications

References 0 publications

UV-sensitive low dark-count PureB single-photon avalanche diode

UV-sensitive low dark-count PureB single-photon avalanche diode

Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

Microfabrication of a wall shear stress sensor using side-implanted piezoresistive tethers

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