AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED <i>p-n</i> JUNCTIONS IN Ge, Si, GaAs, AND GaP

Sze, Simon M.; Gibbons, G.

doi:10.1063/1.1754511

Cited by 433 publications

(81 citation statements)

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“…In the low carrier concentration (reach-through or punch-through case) the avalanche V BD voltage is far from the theoretical predictions because the theoretical curves were calculated for the in®nite current multiplication level [19]. The breakdown voltage at higher dopant concentrations, in our case, are in closer agreement with the theoretical predictions by Sze and Gibbons [19].…”

Section: Resultssupporting

confidence: 80%

“…The breakdown voltages at dierent doping concentrations reported by several authors [12,13,15,16] are in agreement; but some of their results are far from the theoretical curves predicted by Sze and Gibbons [19], Lee and Sze [25] and Okuto and Crowell [26], but are in closer agreement with Hauser's [27] calculations. As pointed out by Chynoweth et al [28] and Moll [29] for junctions with breakdown at voltages less than 8 V for GaAs, the mechanism is mainly by tunneling, or direct ®eld ionization of carriers.…”

Section: Resultssupporting

confidence: 79%

“…From Fig. 1 it is seen that the breakdown voltage at low carrier concentration was far from the theoretical curves obtained by Sze and Gibbons [19]. Despite some scatter in the experimental data points arising from the low doping level material, reasonably good agreement was observed with the experimental data presented by Baliga et al [13] using the vapor and liquid phase epitaxially grown materials.…”

Section: Resultssupporting

confidence: 77%

“…They pointed out that this may be due to very large defect densities greater than 1 Â 10 6 cm À2 or may be due to the surface/interface eects or the edge eect in¯uences the breakdown at low concentrations [17,24]. In the low carrier concentration (reach-through or punch-through case) the avalanche V BD voltage is far from the theoretical predictions because the theoretical curves were calculated for the in®nite current multiplication level [19]. The breakdown voltage at higher dopant concentrations, in our case, are in closer agreement with the theoretical predictions by Sze and Gibbons [19].…”

Section: Resultsmentioning

confidence: 88%

“…The dependence of avalanche breakdown voltage V BD for an abrupt junction on the drift region doping density N B and energy gap E g for Ge, Si, GaAs and GaP can be obtained from the well known Sze and Gibbons expression [19] V BD 60…”

Section: Estimation Of Breakdown Voltage (V Bd )mentioning

confidence: 99%

See 4 more Smart Citations

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Hudait

Krupanidhi

1999

Solid-State Electronics

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The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organic vapor-phase epitaxy grown Sidoped n-GaAs were measured in the doping range of 6 Â 10 15 ±1.5 Â 10 18 cm À3 . These results are compared with the experimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G. Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the measured data and the breakdown voltages by Sze and Gibbons in the high doping concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons. The breakdown voltage at higher doping concentration will be useful for the design and development of GaAs switching devices and the emitter-base region of bipolar transistors. #

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Section: Resultssupporting

confidence: 80%

Section: Resultssupporting

confidence: 79%

Section: Resultssupporting

confidence: 77%

Section: Resultsmentioning

confidence: 88%

Section: Estimation Of Breakdown Voltage (V Bd )mentioning

confidence: 99%

See 3 more Smart Citations

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Hudait

Krupanidhi

1999

Solid-State Electronics

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High Pressure Measurements and the “Universal” Scaling of Impact Ionization with Bandstructure

Allam

Adams

1999

phys. stat. sol. (b)

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Transit Time Devices

Roy

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Impatt Diodes Impatt Structures and Doping Profiles Basic Principle of Generation of Microwaves in Impatt Diodes Small‐Signal Analysis Based on Analytical Approximation Computer Studies of the DC and Small‐Signal Properties of Impatt Diodes of any Doping Profile Small‐Signal Computer Analysis of Impatt Diodes Large‐Signal Analysis of Impatt Diodes DC‐to‐Microwave Conversion Efficiency Effect of Mobile Space Charge Double Avalanche Region Diode and Cancellation of Space Charge Effect Low–High–Low Diodes for Reduction of the Space Charge Effect and Constriction of the Avalanche Zone High‐Frequency Considerations Noise in Impatt Diodes Thermal Limitations and Heat Sink Millimeter‐Wave Impatt Diodes Pulsed Millimeter‐Wave Impatt Diode Frequency Chirp in Pulsed Impatt Oscillators GaAs and InP Impatt Diodes Heterojunction Impatt Diodes Control of Impatt Properties by Optical Illumination of the Active Area and by A Transverse Field in the Drift Region Trapatt Diode Baritt Diodes Acknowledgement

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AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaP

Cited by 433 publications

References 3 publications

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

High Pressure Measurements and the “Universal” Scaling of Impact Ionization with Bandstructure

Transit Time Devices

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